公开(公告)号：EP2528096A1

公开(公告)日：2012-11-28

申请号：EP12181789.4

申请日：2006-02-17

申请人： SanDisk Technologies, Inc.

发明人： Fang, Hao ,  Phat, Tuan ,  Higashitani, Masaaki ,  HEMINK, Gerrit Jan

IPC分类号： H01L27/115 ,  H01L27/105

CPC分类号： H01L27/11529 ,  G11C16/0483 ,  H01L27/105 ,  H01L27/11526

摘要： A NAND flash memory device incorporates a unique booster plate design. The booster plate is biased during read and program operations and the coupling to the floating gates in many cases reduces the voltage levels necessary to program and read the charge stored in the gates. The booster plate also shields against unwanted coupling between floating gates. Self boosting, local self boosting, and erase area self boosting modes used with the unique booster plate further improve read/write reliability and accuracy. A more compact and reliable memory device can hence be realized according to the present invention.

摘要翻译： NAND闪存器件采用独特的增压板设计。 升压板在读取和编程操作期间被偏置，并且在许多情况下耦合到浮动栅极降低了编程和读取存储在门中的电荷所需的电压电平。 升压板还可屏蔽浮动栅极之间的不必要的耦合。 自升压，局部自升压，以及独特升压板使用的擦除区域自增强模式进一步提高了读/写可靠性和精度。 因此，根据本发明可以实现更紧凑和可靠的存储器件。