专利检索 ap:("Sarnoff Corporation" OR "Sarnoff Europe BVBA") AND inv:"RUSS, Cornelius, Christain" 第 1 页

1.

发明公开
LOW VOLTAGE SILICON CONTROLLED RECTIFIER (SCR) FOR ELECTROSTATIC DISCHARGE (ESD) PROTECTION ON SILICON-ON-INSULATOR TECHNOLOGIES 审中-公开
标题翻译：低压硅RULE整流器（SCR）以防止静电放电（ESD）SILICON绝缘体上TECHNOLOGIES

公开(公告)号：EP1614156A2

公开(公告)日：2006-01-11

申请号：EP04750583.9

申请日：2004-04-16

申请人： Sarnoff Corporation , Sarnoff Europe BVBA

发明人： RUSS, Cornelius, Christain , JOSWIAK, Phillip , MERGENS, Markus , ARMER, John , TRINH, Cong-Son , MOHN, Russell , VERHAEGE, Koen

IPC分类号： H01L23/62

CPC分类号： H01L27/0262 , H01L29/7436

摘要： A silicon-on-insulator (SOI) electrostatic discharge (ESD) protection device (100, 200, 300, 400, 500) that can protect very sensitive thin gate oxides by limiting the power dissiptation during the ESD event, which is best achieved by reducing the voltage drop across the active (protection) device during an ESD event. In one embodiment (Figs. 4A and 4B), the invention provides very low triggering and holding voltages. Furthermore, the SOI protection device of the present invention has low impedance and low power dissipation characteristics that reduce voltage build-up, and accordingly, enable designers to fabricate more area efficient protection device.