公开(公告)号：EP2737543A2

公开(公告)日：2014-06-04

申请号：EP12740153.7

申请日：2012-07-26

申请人： Schott Solar AG

发明人： MOSCHNER, Jens Dirk ,  GASSENBAUER, Yvonne ,  LACHOWICZ, Agata ,  FIEDLER, Markus ,  BLENDIN, Gabriele ,  DRESSLER, Katharina

IPC分类号： H01L31/0236

CPC分类号： H01L31/02167 ,  H01L31/02363 ,  H01L31/056 ,  H01L31/068 ,  Y02E10/52 ,  Y02E10/547

摘要： The invention relates to a method for producing a solar cell and to such a cell itself. The solar cell comprises a silicon substrate with a front side, facing the radiation, and a rear side, a first dielectric layer, running along the rear side, a second dielectric layer, running along the side of the first dielectric layer that is facing away from the substrate and consisting of a material from the group comprising silicon nitride, silicon oxide, silicon oxynitride, and a metal layer, extending along the side of the second dielectric layer that is facing away from the substrate. In order to be able to produce the solar cell reproducibly with particularly high efficiency and few process steps, it is proposed that the rear side of the substrate has a gloss value at a 60° irradiation angle of below 80 GU and that the first dielectric layer contains localized negative charges.

公开(公告)号：EP2491577A1

公开(公告)日：2012-08-29

申请号：EP11767185.9

申请日：2011-08-30

申请人： Schott Solar AG

发明人： BLENDIN, Gabriele ,  HORZEL, Joerg ,  LACHOWICZ, Agata ,  SCHUM, Berthold

IPC分类号： H01L21/225 ,  H01L31/18

CPC分类号： H01L21/22 ,  H01L21/2252 ,  H01L31/02 ,  H01L31/103 ,  H01L31/1804 ,  H01L31/186 ,  H01L31/1864 ,  H01L33/08 ,  Y02E10/547 ,  Y02P70/521

摘要： The invention relates to a method for forming a dopant profile based on a surface of a wafer-like semiconductor component with phosphorus as a dopant by applying a phosphorus dopant source onto the surface, forming a first dopant profile with the dopant source that is present on the surface, removing the dopant source, and forming a second dopant profile that has a greater depth in comparison to the first dopant profile. In order to form an optimized dopant profile, the dopant source is removed after forming the first dopant profile, and precipitates that are crystallized selectively on or in the surface from the phase Si
x P
y and Si
x P
y O
z are removed.

公开(公告)号：EP2374159A2

公开(公告)日：2011-10-12

申请号：EP09763962.9

申请日：2009-12-03

申请人： Schott Solar AG

发明人： HORZEL, Jörg ,  FRANKE, Dieter ,  BLENDIN, Gabriele ,  JAHN, Marco ,  SCHMIDT, Wilfried

IPC分类号： H01L31/18 ,  H01L31/068

CPC分类号： H01L31/1804 ,  H01L21/2253 ,  H01L21/2255 ,  H01L31/035281 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

摘要： The invention relates to a method for producing a dopant profile, which is based on a surface of a wafer-like semiconductor component (10), by introducing dopant atoms into the semiconductor component. In order to be able to manufacture semiconductor components with a desired dopant depth profile inexpensively, it is proposed that a dopant-containing layer be produced on or in a region of the surface first of all in order to produce a provisional first dopant profile and then a plurality of semiconductor components (10) which have a corresponding layer be subjected to heat treatment on top of one another in the form of a stack (26) in order to produce a second dopant profile which has a greater depth in comparison with the first dopant profile.