公开(公告)号：EP1306895A3

公开(公告)日：2004-07-28

申请号：EP02021751.9

申请日：2002-09-25

申请人： Sharp Kabushiki Kaisha

发明人： Wei-Wei, Zhuang ,  Fengyan, Zhang ,  Sheng, Teng Hsu ,  Tingkai, Li

IPC分类号： H01L21/3213

CPC分类号： H01L21/02071 ,  B08B3/12 ,  Y10S134/902

摘要： A method of cleaning a metal oxide thin film on a silicon wafer, includes dipping the wafer in an organic solvent; drying the wafer in a nitrogen atmosphere; and stripping any photoresist from the wafer in an oxygen atmosphere under partial vacuum at a temperature of about 200°C. The wafer may also be cleaned by dipping in a polar organic solvent and subjecting the wafer to ultrasound while immersed in the solvent.

摘要翻译： 一种在硅晶片上清洗金属氧化物薄膜的方法，包括将晶片浸入有机溶剂中; 在氮气气氛中干燥晶片; 并在部分真空下，在约200℃的温度下，在氧气氛中从晶片上剥离任何光致抗蚀剂。也可以通过浸入极性有机溶剂中并将晶片浸入溶剂中使其超声波清洗晶片。

公开(公告)号：EP1306895A2

公开(公告)日：2003-05-02

申请号：EP02021751.9

申请日：2002-09-25

申请人： Sharp Kabushiki Kaisha

发明人： Wei-Wei, Zhuang ,  Fengyan, Zhang ,  Sheng, Teng Hsu ,  Tingkai, Li

IPC分类号： H01L21/3213

CPC分类号： H01L21/02071 ,  B08B3/12 ,  Y10S134/902

摘要： A method of cleaning a metal oxide thin film on a silicon wafer, includes dipping the wafer in an organic solvent; drying the wafer in a nitrogen atmosphere; and stripping any photoresist from the wafer in an oxygen atmosphere under partial vacuum at a temperature of about 200°C. The wafer may also be cleaned by dipping in a polar organic solvent and subjecting the wafer to ultrasound while immersed in the solvent.