公开(公告)号：EP2418542A3

公开(公告)日：2014-07-09

申请号：EP11176233.2

申请日：2011-08-02

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： Yoshikawa, Hiroki ,  Inazuki, Yukio ,  Nishikawa, Kazuhiro ,  Kanekko, Hideo

IPC分类号： G03F1/32 ,  G03F1/58 ,  G03F1/00

CPC分类号： G03F1/14 ,  G03F1/32 ,  G03F1/50 ,  G03F1/58

摘要： A binary photomask blank has on a transparent substrate a light-shielding film including substrate-side and surface-side compositionally graded layers, having a thickness of 35-60 nm, and composed of a silicon base material containing a transition metal and N and/or O. The substrate-side compositionally graded layer has a thickness of 10-58.5 nm, and a N+O content of 25-40 at% at its lower surface and 10-23 at% at its upper surface. The surface-side compositionally graded layer has a thickness of 1.5-8 nm, and a N+O content of 10-45 at% at its lower surface and 45-55 at% at its upper surface.

公开(公告)号：EP2418542A2

公开(公告)日：2012-02-15

申请号：EP11176233.2

申请日：2011-08-02

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： Yoshikawa, Hiroki ,  Inazuki, Yukio ,  Nishikawa, Kazuhiro ,  Kanekko, Hideo

IPC分类号： G03F1/00

CPC分类号： G03F1/14 ,  G03F1/32 ,  G03F1/50 ,  G03F1/58

摘要： A binary photomask blank has on a transparent substrate a light-shielding film including substrate-side and surface-side compositionally graded layers, having a thickness of 35-60 nm, and composed of a silicon base material containing a transition metal and N and/or O. The substrate-side compositionally graded layer has a thickness of 10-58.5 nm, and a N+O content of 25-40 at% at its lower surface and 10-23 at% at its upper surface. The surface-side compositionally graded layer has a thickness of 1.5-8 nm, and a N+O content of 10-45 at% at its lower surface and 45-55 at% at its upper surface.

摘要翻译： 二元光掩模坯料在透明基板上具有包括厚度为35-60nm的基板侧和表面侧成分梯度层的遮光膜，并且由含有过渡金属和N和/ 基底侧组成梯度层的厚度为10-58.5nm，N + O含量在其下表面为25-40at％，在其上表面为10-23at％。 表面侧组成梯度层的厚度为1.5-8nm，其下表面的N + O含量为10-45原子％，其上表面为45-55原子％。