-
公开(公告)号：EP3422099A1
公开(公告)日：2019-01-02
申请号：EP18176359.0
申请日：2018-06-06
发明人： OZAWA, Ryoken , KOSAKA, Takuro , INAZUKI, Yukio
摘要： A photomask blank for an exposure light of ArF excimer laser, including a transparent substrate (1) and a light-shielding film (2) containing molybdenum, silicon, and nitrogen. The light-shielding film is formed in a single layer or a multilayer composed of a single composition layer or a composition gradient layer, a reflectance of the light-shielding film on a side remote from the substrate is 40% or less, and among the refractive indexes at the surfaces on the substrate side and the side remote from the substrate of all layers, a difference between the highest and lowest refractive indexes is 0.2 or less, and among the extinction coefficients at the surfaces, a difference between the highest and lowest extinction coefficients is 0.5 or less. The light-shielding film assumes a satisfactory and undeteriorated sectional shape of a mask pattern in an etching process in mask processing or defect correcting.
-
公开(公告)号：EP3629084A1
公开(公告)日：2020-04-01
申请号：EP19197670.3
申请日：2019-09-17
发明人： KOSAKA, Takuro , OZAWA, Ryoken
摘要： Provided is a phase shift-type photomask blank that includes a transparent substrate, and a phase shift film thereon, the phase shift film consisting of a single layer or multiple layers, the single layer or multiple layers including at least one layer selected from the group consisting of a layer composed of transition metal, silicon, nitrogen and oxygen, and a layer composed of silicon, nitrogen and oxygen, the phase shift film having a phase shift of 150 to 250°, and a transmittance of 60 to 80%, with respect to light having a wavelength of up to 200 nm, the phase shift film having a thickness of up to 150 nm, and the layer composed of transition metal, silicon, nitrogen and oxygen having a content (atomic ratio) of up to 0.03, as a ratio of the transition metal to a total content of the transition metal and silicon.
-
搜索结果
2 条记录 (耗时 0.008 秒)
