公开(公告)号：EP3867903A1

公开(公告)日：2021-08-25

申请号：EP19795374.8

申请日：2019-07-25

申请人： Silicon Storage Technology, Inc.

发明人： TRAN, Hieu, Van ,  LY, Anh ,  VU, Thuan ,  NGUYEN, Kha ,  PHAM, Hien ,  HONG, Stanley ,  TRINH, Stephen, T.

IPC分类号： G11C5/14 ,  G11C7/22 ,  G11C16/30 ,  G11C16/32 ,  H02M3/07

公开(公告)号：EP4202929A1

公开(公告)日：2023-06-28

申请号：EP23156743.9

申请日：2019-07-25

申请人： Silicon Storage Technology, Inc.

发明人： TRAN, Hieu Van ,  LY, Anh ,  VU, Thuan ,  NGUYEN, Kha ,  PHAM, Hien ,  HONG, Stanley ,  TRINH, Stephen, T.

IPC分类号： G11C5/14 ,  G11C7/22 ,  G11C16/30 ,  G11C16/32 ,  G11C16/04 ,  H02M3/07

摘要： Numerous embodiments of an improved charge pump design are disclosed for generating the high voltages necessary to perform erase and program operations in non-volatile flash memory devices. In these embodiments, each boost stage in the charge pump is modified to overcome a deficiency in prior art charge pumps whereby voltage actually would decrease in the final boost stage. These modifications include the addition of one or more of a clock doubling circuit, a local self-precharge circuit, a feed-forward precharge circuit, a feed-backward precharge circuit, and a hybrid circuit comprising NMOS and PMOS transistors and diodes.