METHOD OF PHASE NOISE REDUCTION IN A SOI TYPE MASTER-SLAVE CIRCUIT
    1.
    发明公开
    METHOD OF PHASE NOISE REDUCTION IN A SOI TYPE MASTER-SLAVE CIRCUIT 审中-公开
    一种用于减少相位噪声主从SOI电路

    公开(公告)号:EP1730840A1

    公开(公告)日:2006-12-13

    申请号:EP05718373.3

    申请日:2005-03-11

    申请人: Soisic

    IPC分类号: H03K3/011 H03K3/3562

    CPC分类号: H03K3/35625 H03K3/013

    摘要: The invention provides a design method for reducing phase noise of an electronic circuit comprising a master section and a slave section, said sections including SOI type transistors, characterised in that, first, the floating body transistors which are involved in the degradation of said phase noise are located, then their floating body is set to a potential by means of an appropriate connection, in order to locally reduce their contribution to the overall phase noise of said circuit. It also provides a reduced phase noise master-slave circuit. This circuit includes floating body SOI type transistors, characterised in that the potential of said floating body of the transistors that (60, 61) contribute to said phase noise is set by means of an appropriate connection (64, 65).