公开(公告)号：EP4131380A1

公开(公告)日：2023-02-08

申请号：EP21778940.3

申请日：2021-03-24

申请人： Sony Group Corporation ,  Sony Semiconductor Solutions Corporation

发明人： NAKANO, Hiroshi ,  HIRATA, Shintarou ,  MUROYAMA, Masakazu ,  YAMAZAKI, Yusuke ,  MORIWAKI, Toshiki ,  IINO, Yoichiro ,  KURISHIMA, Kazunori ,  MURAKAMI, Yosuke

IPC分类号： H01L27/146 ,  H04N5/359 ,  H04N5/374

摘要： An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode; a third electrode; a photoelectric conversion layer; and a semiconductor layer. The first electrode and the second electrode are disposed in parallel. The third electrode is disposed to be opposed to the first electrode and the second electrode. The photoelectric conversion layer is provided between the first electrode and second electrode and the third electrode. The photoelectric conversion layer includes an organic material. The semiconductor layer includes a first layer and a second layer that are stacked in order from the first electrode and second electrode side between the first electrode and second electrode and the photoelectric conversion layer. The first layer has a larger value for C5s indicating a contribution ratio of a 5s orbital to a conduction band minimum than a value of the second layer for C5s. The second layer has a larger value for E VO indicating oxygen deficiency generation energy or a larger value for E VN indicating nitrogen deficiency generation energy than a value of the first layer for E VO or E VN .