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1.发明公开Method for growing group III nitride semiconductor crystal and growing device for group III nitride semiconductor crystal 审中-公开Vorrichtung und Verfahren zum Ziehen von Gruppe-III-Nitrid-Halbleiterkristall
公开(公告)号：EP2177649A1
公开(公告)日：2010-04-21
申请号：EP10001428.1
申请日：2008-12-10
发明人： Miyanaga, Michimasa , Mizuhara, Naho , Tanizaki, Keisuke , Satoh, Issei , Takeuchi, Hisao , Nakahata, Hideaki
CPC分类号： C30B23/005 , C30B29/403 , Y10T117/10
摘要： A method for growing a Group III nitride semiconductor crystal (15) by sublimating a material (13) containing a Group III nitride semiconductor and depositing a sublimated material gas, comprising the steps of: preparing a chamber (101) including a heat-shielding portion (110), made from tantalum or tungsten, for shielding heat radiation from said material (13) therein; arranging said material (13) on one side of said heat-shielding portion (110) in said chamber (101); and growing said Group III nitride semiconductor crystal (15) by heating said material (13) to be sublimated, and depositing said material gas on the other side of said heat-shielding portion (110) in said chamber (101).
摘要翻译： 一种用于通过升华含有III族氮化物半导体的材料（13）并沉积升华的材料气体来生长III族氮化物半导体晶体（15）的方法，包括以下步骤：制备包括热屏蔽部分 （110），其由钽或钨制成，用于屏蔽来自所述材料（13）的热辐射; 在所述室（101）中将所述材料（13）布置在所述热屏蔽部分（110）的一侧上; 以及通过加热所述待升华的材料（13）生长所述III族氮化物半导体晶体（15），并将所述材料气体沉积在所述室（101）中的所述热屏蔽部分（110）的另一侧上。
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公开(公告)号：EP2151712A1
公开(公告)日：2010-02-10
申请号：EP09165935.9
申请日：2009-07-21
CPC分类号： G02F1/3558 , G02F1/353 , G02F2001/3548
摘要： The application concerns a method of manufacturing a wavelength converter whereby the transmissivity can be improved.
A method of manufacturing a wavelength converter (10 a ) comprises the following steps. At first, a crystal is grown. Then a first crystal part (11) and a second crystal part (12) are formed by sectioning the crystal into two; the second crystal part (12) is flipped with respect to the first crystal part (11) in such a way that the directions of spontaneous polarisation of the crystal parts are mutually reserved. The first and second crystals (11) and (12) are then interlocked in such a way that a domain inversion structure in which the directions of spontaneous polarisation of the first and second crystals (11) and (12) are periodically reversed along an optical waveguide (13) is formed, and the domain inversion structure satisfies quasi-phase-matching conditions for an incoming beam (101).摘要翻译： 该应用涉及一种制造波长转换器的方法，由此可以提高透射率。 制造波长转换器（10a）的方法包括以下步骤。 起初，晶体生长。 然后通过将晶体分成两部分形成第一晶体部分（11）和第二晶体部分（12）; 相对于第一晶体部分（11），第二晶体部分（12）以相互保留晶体部分的自发极化方向的方式被翻转。 第一和第二晶体（11）和（12）然后互锁，使得第一和第二晶体（11）和（12）的自发极化方向沿光学周期性地反转的畴反转结构 波导（13），域反转结构满足入射光束（101）的准相位匹配条件。
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3.发明公开Method of manufacturing a wavelength converter 审中-公开威尔法罕zur Herstellung einesWellenlängenumwandlers
公开(公告)号：EP2372448A1
公开(公告)日：2011-10-05
申请号：EP11166195.5
申请日：2009-07-21
CPC分类号： G02F1/3558 , G02F1/353 , G02F2001/3548
摘要： A method of manufacturing a wavelength converter (10d) that has an optical waveguide (13) and that converts the wavelength of an incoming beam (101) input into the optical waveguide through one end (13a) thereof, and outputs an outgoing beam (102) from the optical waveguide through the other end (13b) thereof, the wavelength converter manufacturing method comprising: a step of growing a first crystal (11); a step of forming two or more regularly arrayed projections (11c) in a surface (11a) of the first crystal (11); and a step of growing a second crystal (16), being an amorphous crystal in which there is essentially no difference in refractive index from that of the first crystal (11), onto said surface (11a) of the first crystal (11); wherein in said step of growing the second crystal, the first and second crystals are formed in such a way that a domain inversion structure in which the polar directions of the first and second crystals periodically reverse along the optical waveguide is created, and the domain inversion structure satisfies quasi-phase-matching conditions for the incoming beam.
摘要翻译： 一种制造波长转换器（10d）的方法，该波长转换器（10d）具有光波导（13），并且通过其一端（13a）将输入光束（101）的波长转换成光波导，并输出出射光束（102） ）从所述光波导通过其另一端（13b），所述波长转换器制造方法包括：生长第一晶体（11）的步骤; 在第一晶体（11）的表面（11a）中形成两个或更多个规则排列的突起（11c）的步骤; 以及生长第二晶体（16）的第二晶体（16），其是在第一晶体（11）的所述表面（11a）上基本上没有第一晶体（11）的折射率差异的非晶体晶体。 其中在所述生长第二晶体的步骤中，第一和第二晶体以这样的方式形成，其中产生沿着光波导周期性地反转的第一和第二晶体的极方向的畴反转结构，并且域反转 结构满足入射光束的准相位匹配条件。
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4.发明授权
公开(公告)号：EP2151712B1
公开(公告)日：2011-09-21
申请号：EP09165935.9
申请日：2009-07-21
CPC分类号： G02F1/3558 , G02F1/353 , G02F2001/3548
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公开(公告)号：EP2075356B1
公开(公告)日：2011-04-27
申请号：EP08021449.7
申请日：2008-12-10
发明人： Miyanaga, Michimasa , Mizuhara, Naho , Tanizaki, Keisuke , Satoh, Issei , Takeuchi, Hisao , Nakahata, Hideaki
CPC分类号： C30B23/005 , C30B29/403 , Y10T117/10
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6.发明公开Method for growing group III nitride semiconductor crystal and growing device for group III nitride semiconductor crystal 有权Verfahren zum Ziehen von Gruppe-III-Nitrid-Halbleiterkristall
公开(公告)号：EP2075356A1
公开(公告)日：2009-07-01
申请号：EP08021449.7
申请日：2008-12-10
发明人： Miyanaga, Michimasa , Mizuhara, Naho , Tanizaki, Keisuke , Satoh, Issei , Takeuchi, Hisao , Nakahata, Hideaki
CPC分类号： C30B23/005 , C30B29/403 , Y10T117/10
摘要： A method for growing a Group III nitride semiconductor crystal is provided with the following steps: First, a chamber (101) including a heat-shielding portion (110) for shielding heat radiation from a material 13 therein is prepared. Then, material 13 is arranged on one side of heat-shielding portion (110) in chamber (101). Then, by heating material (13) to be sublimated, a material gas is deposited on the other side of heat-shielding portion (110) in chamber (101) so that a Group III nitride semiconductor crystal (15) is grown.
摘要翻译： 提供了用于生长III族氮化物半导体晶体的方法，其具有以下步骤：首先，准备包括用于屏蔽来自材料13的热辐射的热屏蔽部分（110）的室（101）。 然后，在室（101）的热屏蔽部（110）的一侧配置有材料13。 然后，通过加热要升华的材料（13），在室（101）中的热屏蔽部分（110）的另一侧上沉积材料气体，使得生长III族氮化物半导体晶体（15）。
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