MAGNETIC THIN FILM OR COMPOSITE MAGNETIC THIN FILM FOR HIGH FREQUENCY AND MAGNETIC DEVICE INCLUDING THE SAME
    1.
    发明公开
    MAGNETIC THIN FILM OR COMPOSITE MAGNETIC THIN FILM FOR HIGH FREQUENCY AND MAGNETIC DEVICE INCLUDING THE SAME 审中-公开
    DÜNNERMAGNETFILM ODER ZUSAMMUSTRETZTERDÜNNERMAGNETFILMFÜRHOCHFREQUENZ UND MAGNETVORRICHTUNG DAMIT

    公开(公告)号:EP1585149A1

    公开(公告)日:2005-10-12

    申请号:EP03780982.9

    申请日:2003-12-22

    申请人: TDK Corporation

    摘要: There can be obtained a magnetic thin film for high frequency 1 which has both a high permeability and a high saturation magnetization by combining a T-L composition layer 5 comprising a T-L composition, wherein T is Fe or FeCo, and L is at least one element selected from the group consisting of C, B and N, with a Co based amorphous alloy layer 3 disposed on either of the surfaces of the T-L composition layer 5. Further, there can be obtained a magnetic thin film for high frequency 1 which has both a high permeability and a high saturation magnetization, and at the same time has a high resistivity by further providing the magnetic thin film with, in addition to the T-L composition layer 5 and the Co based amorphous alloy layer 3, a high resistance layer 7 having an electric resistance higher than the T-L composition layer 5 and the Co based amorphous alloy layer 3.

    摘要翻译: 通过组合包含TL组合物的TL组合物层5,其中T是Fe或FeCo,并且L是选择的至少一种元素,可以获得具有高磁导率和高饱和磁化强度的高频1磁性薄膜 从由C,B和N组成的组中,与配置在TL组合物层5的任一表面上的Co基非晶态合金层3构成。此外,可以得到高频1的磁性薄膜,其具有 高磁导率和高饱和磁化强度,同时通过进一步提供磁性薄膜,除了TL组合物层5和Co基非晶合金层3之外,还具有高电阻层7,高电阻层7具有 电阻高于TL组合物层5和Co基非晶态合金层3.