公开(公告)号：EP2611947A1

公开(公告)日：2013-07-10

申请号：EP11770712.5

申请日：2011-09-01

申请人： TEL Solar AG

发明人： KLUTH, Oliver ,  CAGLAR, Onur ,  PAOLO, Losio ,  GOLDBACH-ASCHEMANN, Stephanie

IPC分类号： C23C16/18 ,  C23C16/40 ,  C23C16/54 ,  C23C16/455 ,  H01L31/0224 ,  H01L31/0236

CPC分类号： H01L31/1884 ,  C23C16/407 ,  C23C16/45523 ,  C23C16/54 ,  H01L31/022425 ,  H01L31/022483 ,  H01L31/02366 ,  Y02E10/50

摘要： The invention relates to a method of coating a substrate for manufacturing a solar cell in a deposition environment, the method comprising the steps of: a) Depositing a first zinc oxide layer onto a substrate. Reducing a zinc precursor content in the deposition environment, c) Treating the first zinc oxide layer with a mixture of diborane and water to form a plurality of coating seeds on the surface of the first zinc oxide layer, and d) Depositing a second zinc oxide layer onto the first zinc oxide layer. The method according to the invention allows improving the material quality of silicon layers which may later be grown on such a substrate. Additionally, the light scattering and subsequent light trapping in a respective solar cell may be enhanced by a method according to the invention. The present invention further relates to a solar cell being manufactured according to the invention.

公开(公告)号：EP2666188A1

公开(公告)日：2013-11-27

申请号：EP12700136.0

申请日：2012-01-13

申请人： TEL Solar AG

发明人： LOSIO, Paolo ,  CAGLAR, Onur ,  RECHTSTEINER, Peter ,  CARROY, Perrine ,  CHRIST, Holger

IPC分类号： H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/022483 ,  H01L31/076 ,  H01L31/1884 ,  Y02E10/548

摘要： A multi-part transparent conductive zinc oxide layer for a photoelectric conversion device, and a method of producing same. The transparent conductive zinc oxide layer includes at least one basic layer sequence with a varying boron dopant concentration. The basic layer sequence includes a thinner transparent conductive zinc oxide higher-boron-doped layer and a thicker transparent conductive zinc oxide lower-boron-doped layer. The doping density through each individual conductive zinc oxide layer is substantially constant, which is achieved by intentionally doping the thicker transparent conductive zinc oxide lower-boron-doped layer. Optionally, an interlayer may be present between the at least one basic layer sequence and the substrate or an n-doped silicon layer upon which it is disposed. This advantageously permits efficient Edge Isolation by Laser EIL ablation of the transparent conductive zinc oxide layers while maintaining good electrical and optical properties in said layers.