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公开(公告)号:EP1201032A1
公开(公告)日:2002-05-02
申请号:EP00951343.3
申请日:2000-07-05
发明人: MATTISSON, Sven , GEIS, Henrik
IPC分类号: H03H11/42
摘要: The invention relates to an integrated gyrator structure, in which each transistor in the gyrator core (preferably MOS devices) has series feedback associated therewith. This allows for compensation over a large bandwidth of the effects of channel delay in the MOS transistors.
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公开(公告)号:EP1201032B1
公开(公告)日:2004-03-17
申请号:EP00951343.3
申请日:2000-07-05
发明人: MATTISSON, Sven , GEIS, Henrik
IPC分类号: H03H11/42
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