摘要:
A photosensitive cell comprising an anode and a cathode, a donor-type organic material and an acceptor-type organic material forming a donor-acceptor junction connected between the anode and the cathode, and an exciton blocking layer connected between the acceptor-type organic material of the donor-acceptor junction and the cathode, wherein a Fermi level of the cathode is no more than 1 eV higher than a HOMO of the exciton blocking layer.
摘要:
A method of fabricating a photosensitive optoelectronic device, comprising: depositing a first organic photoconductive material over a first electrode to form a first continuous layer; depositing a second organic photoconductive material over the first continuous layer to form a first discontinuous layer comprising a plurality of islands; depositing a third organic photoconductive material over the first discontinuous layer to form a second continuous layer; and depositing a second electrode over the second continuous layer, wherein one of the first organic photoconductive material and the second organic photoconductive material consists essentially of a donor host material, and another of the first organic photoconductive material and the second organic photoconductive material consists essentially of an acceptor host material, and the second organic photoconductive material is a sensitizer having an absorption spectra different from the donor host material and the acceptor host material.
摘要:
The inventions relates to a device comprising an anode, a cathode, a plurality of stacked organic photoactive regions, disposed between and electrically connected to the anode and the cathode, each organic photoactive region comprising an organic acceptor material and an organic donor material, and a plurality of exciton block layers, wherein for at least one of the organic photoactive regions, an exciton blocking layer of said plurality of exciton blocking layers is disposed adjacent to and in direct physical contact with the organic acceptor material of the respective organic photoactive region, wherein a LUMO of each exciton blocking layer other than the exciton blocking layer closest to the cathode is not more than about 0.3 eV greater than a LUMO of the adjacent acceptor material.