公开(公告)号：EP1492161A4

公开(公告)日：2006-05-24

申请号：EP03715674

申请日：2003-03-31

申请人： TOKYO ELECTRON LTD

发明人： SUGAWARA TAKUYA ,  TADA YOSHIHIDE ,  NAKAMURA GENJI ,  OZAKI SHIGENORI ,  NAKANISHI TOSHIO ,  SASAKI MASARU ,  MATSUYAMA SEIJI ,  HASEBE KAZUHIDE ,  NAKAJIMA SHIGERU ,  FUJIWARA TOMONORI

IPC分类号： H01L21/02 ,  H01L21/28 ,  H01L21/316 ,  H01L29/51

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31604 ,  H01L21/31645 ,  H01L21/31662 ,  H01L28/56 ,  H01L29/517 ,  H01L29/518

摘要： A method for forming an underlying film at the interface between an insulation film and a basic material for electronic device by irradiating the surface of the insulation film formed on the basic material for electronic device with plasma based on a processing gas containing at least oxygen atoms. A high-quality underlying film can be obtained at the interface between the insulation film and the basic material for electronic device in order to enhance the characteristics of the insulation film.

公开(公告)号：EP1361605A4

公开(公告)日：2006-02-15

申请号：EP02715873

申请日：2002-01-22

申请人： TOKYO ELECTRON LTD

发明人： SUGAWARA TAKUYA ,  NAKANISHI TOSHIO ,  OZAKI SHIGENORI ,  MATSUYAMA SEIJI ,  MURAKAWA SHIGEMI ,  TADA YOSHIHIDE

IPC分类号： C23C8/02 ,  C23C8/34 ,  C23C8/36 ,  C23C16/44 ,  C23C16/455 ,  H01L21/314 ,  H01L21/316

CPC分类号： C23C16/45565 ,  C23C8/02 ,  C23C8/34 ,  C23C8/36 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/2807 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/32055

摘要： Method for fabricating the structure of an electronic device (e.g. a high-performance MOS semiconductor device) having good electric characteristics in which an SiO2 film and an SiON film are employed as an insulation film having an extremely small thickness (e.g. 2.5 nm or less) and polysilicon, amorphous silicon or SiGe is employed for an electrode. Under existence of a processing gas containing oxygen and a rare gas, a wafer W principally comprising Si is irradiated with microwave through a planar antenna member SPA to form a plasma containing oxygen and a rare gas (or a plasma containing nitrogen and a rare gas or a plasma containing nitrogen, a rare gas and hydrogen). An oxide film (or an oxide nitride film) is formed on the wafer surface using that plasma and an electrode of polysilicon, amorphous silicon or SiGe is formed, as required, thus forming the structure of an electronic device.

公开(公告)号：EP1505641A4

公开(公告)日：2008-11-05

申请号：EP03749985

申请日：2003-03-28

申请人： TOKYO ELECTRON LTD

发明人： MATSUYAMA SEIJI ,  SUGAWARA TAKUYA ,  OZAKI SHIGENORI ,  NAKANISHI TOSHIO ,  SASAKI MASARU

IPC分类号： H01L21/28 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/469 ,  H01L21/76 ,  H01L29/51 ,  H01L29/78 ,  H01L21/318

CPC分类号： H01L21/28167 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/31662 ,  H01L29/518 ,  H01L29/7833

摘要： A method of treating a substrate wherein an oxide film formed on a surface of a silicon substrate is nitrided by a microwave plasma nitring treatment to form an oxynitride film, which comprises setting an electron temperature of a plasma exited with a microwave at 2 eV or less and a residence time of oxygen in the process space in which the substrate is held at 2 seconds or less. The method allows the suppression of re-growth of an oxide film and reduction of the thickness of the film on an oxide film basis, with the avoidance of damage to the oxynitride film.

公开(公告)号：EP1361606A4

公开(公告)日：2005-06-29

申请号：EP02716395

申请日：2002-01-25

申请人： TOKYO ELECTRON LTD

发明人： SUGAWARA TAKUYA ,  NAKANISHI TOSHIO ,  OZAKI SHIGENORI ,  MATSUYAMA SEIJI ,  MURAKAWA SHIGEMI ,  TADA YOSHIHIDE

IPC分类号： C23C16/40 ,  C23C16/56 ,  H01L21/28 ,  H01L21/31 ,  H01L21/316 ,  H01L21/768 ,  H01L29/51 ,  H01L21/318

CPC分类号： C23C16/56 ,  C23C16/401 ,  C23C16/402 ,  H01J37/3222 ,  H01J37/3244 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28273 ,  H01L21/3105 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/31658 ,  H01L21/31662 ,  H01L21/76826 ,  H01L21/76828 ,  H01L29/517 ,  H01L29/518

摘要： A method of producing an electronic device material such as an insulating layer excellent in electric characteristics and a high-quality MOS semiconductor provided with a semiconductor layer, the method comprising the step of carrying out a CVD treating on a substrate to be treated mainly containing single-crystal silicon to form an insulting film, and the step of exposing the substrate to be treated to plasma generated by irradiating a treating gas with a microwave via a flat antenna member (SPA) having a plurality of slots to modify the insulating film using this plasma.

摘要翻译： 一种制造高品质MOS型半导体的电子器件材料的方法，包括绝缘层和电特性优异的半导体层。 该方法包括：将包含单晶硅作为主要成分的待处理衬底进行CVD处理，从而形成绝缘层; 以及通过经由具有多个狭缝的平面天线构件基于微波照射从待处理气体生成的等离子体曝光的步骤，由此通过使用由此产生的等离子体来修正绝缘膜 。