CRYSTAL GROWTH CONTROL AGENT, METHOD FOR FORMING p-TYPE SEMICONDUCTOR MICROPARTICLES OR p-TYPE SEMICONDUCTOR MICROPARTICLE FILM, COMPOSITION FOR FORMING HOLE TRANSPORT LAYER, AND SOLAR CELL
    2.
    发明公开
    CRYSTAL GROWTH CONTROL AGENT, METHOD FOR FORMING p-TYPE SEMICONDUCTOR MICROPARTICLES OR p-TYPE SEMICONDUCTOR MICROPARTICLE FILM, COMPOSITION FOR FORMING HOLE TRANSPORT LAYER, AND SOLAR CELL 审中-公开
    用于控制晶体生长过程用于形成p型半导体微粒或P型半导体微颗粒膜上形成组合物的空穴传输层和太阳能电池,

    公开(公告)号:EP3116019A4

    公开(公告)日:2017-03-22

    申请号:EP15762215

    申请日:2015-03-10

    IPC分类号: H01L21/368 H01G9/20 H01L51/46

    摘要: First, there is provided a crystal growth control agent which is capable of suppressing an increase in a crystal size of a p-type semiconductor, and performing chemical modification on a surface of p-type semiconductor microparticle, a method for forming p-type semiconductor microparticles or a p-type semiconductor microparticle film by using the crystal growth control agent, a composition for forming a hole transport layer of a solar cell, and a solar cell using the composition for forming a hole transport layer. Second, there is provided a composition for forming a hole transport layer which is capable of prompting crystallization and fine pulverization of the p-type semiconductor and performing the chemical modification on the surface of the p-type semiconductor microparticle even in the case where an organic salt (an ionic liquid) containing an anion other than the thiocyanate ion is used, and a solar cell using the composition for forming a hole transport layer. According to the present invention, the crystal growth control agent contains at least one of sulfur-containing compounds (except for thiocyanate) selected from the group consisting of a compound, which generates a thiolate anion due to dissociation of a proton or a cation, and a disulfide compound, and controls crystal growth of a p-type semiconductor.