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1.发明公开Light emitting semiconductor device using gallium nitride group compound 失效Lichtemittierende Vorrichtung aus einer Verbindung der Galliumnitridgruppe。
公开(公告)号：EP0483688A2
公开(公告)日：1992-05-06
申请号：EP91118253.3
申请日：1991-10-25
IPC分类号： H01L33/00
CPC分类号： H01L33/382 , H01L33/007 , H01L33/32 , H01L33/325 , H01L33/40
摘要： There are disclosed two types of gallium nitride LED having the pn junction. An LED of gallium nitride compound semiconductor (Al x Ga 1-x N, where 0≦x
摘要翻译： 公开了具有pn结的两种类型的氮化镓LED。 氮化镓化合物半导体（Al x Ga 1-x N，其中0
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公开(公告)号：EP0483688B1
公开(公告)日：1997-01-15
申请号：EP91118253.3
申请日：1991-10-25
IPC分类号： H01L33/00
CPC分类号： H01L33/382 , H01L33/007 , H01L33/32 , H01L33/325 , H01L33/40
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3.发明公开
公开(公告)号：EP0483688A3
公开(公告)日：1992-07-15
申请号：EP91118253.3
申请日：1991-10-25
IPC分类号： H01L33/00
CPC分类号： H01L33/382 , H01L33/007 , H01L33/32 , H01L33/325 , H01L33/40
摘要： There are disclosed two types of gallium nitride LED having the pn junction. An LED of gallium nitride compound semiconductor (Al x Ga 1-x N, where 0≦x
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AND
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