公开(公告)号：EP3308392A1

公开(公告)日：2018-04-18

申请号：EP16731351.9

申请日：2016-06-03

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA ,  Denso Corporation

发明人： TAKAYA, Hidefumi ,  MIZUNO, Shoji ,  WATANABE, Yukihiko ,  AOI, Sachiko

IPC分类号： H01L21/336 ,  H01L29/78 ,  H01L29/12 ,  H01L29/06 ,  H01L29/423

CPC分类号： H01L29/1608 ,  H01L21/02529 ,  H01L21/046 ,  H01L21/0475 ,  H01L21/049 ,  H01L29/0623 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66068 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7813

摘要： A method for manufacturing an insulated gate switching device is provided. The method includes: forming a first trench in a surface of a first SiC semiconductor layer; implanting p-type impurities into a bottom surface of the first trench; depositing a second SiC semiconductor layer on an inner surface of the first trench to form a second trench; and forming a gate insulating layer, a gate electrode, a first region and a body region so that the gate insulating layer covers an inner surface of the second trench, the gate electrode is located in the second trench, the first region is of n-type and in contact with the gate insulating layer, the body region is of p-type, separated from the implanted region, and in contact with the gate insulating layer under the first region.

公开(公告)号：EP3365918A1

公开(公告)日：2018-08-29

申请号：EP16778466.9

申请日：2016-09-16

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA ,  Denso Corporation

发明人： KUMAZAWA, Teruaki ,  MIYAHARA, Shinichiro ,  AOI, Sachiko

IPC分类号： H01L29/417 ,  H01L29/66 ,  H01L29/739 ,  H01L29/78

CPC分类号： H01L29/7813 ,  H01L23/3192 ,  H01L29/1095 ,  H01L29/417 ,  H01L29/41741 ,  H01L29/66068 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7397

摘要： A provided method of manufacturing a semiconductor device includes formation of an interlayer insulating. The interlayer insulating film includes first and second insulating layers. The first insulating layer covers an upper surface of each of the gate electrodes. The second insulating layer is located on the first insulating layer. A contact hole is provided in the interlayer insulating film at a position between the trenches. Then the interlayer insulating film is heated at a temperature lower than the softening temperature of the first insulating layer and higher than the softening temperature of the second insulating layer so as to make a surface of the second insulating layer into a curved surface so that surfaces of end portions of the second insulating layer are sloping from the corresponding contact holes so as to be displaced upward toward a center of the corresponding trench.

公开(公告)号：EP2234163A1

公开(公告)日：2010-09-29

申请号：EP08859002.1

申请日：2008-12-02

申请人： Toyota Jidosha Kabushiki Kaisha

发明人： AOI, Sachiko ,  SUGIYAMA, Takahide ,  SUZUKI, Takashi ,  SOENO, Akitaka ,  NISHIWAKI, Tsuyoshi

IPC分类号： H01L29/739 ,  H01L21/336 ,  H01L29/12 ,  H01L29/78

CPC分类号： H01L29/7397 ,  H01L29/0834 ,  H01L29/4236 ,  H01L29/42364 ,  H01L29/66348 ,  H01L29/66734

摘要： IGBT 10 comprises an n + -type emitter region 34, an n - -type drift region 26, a p-type body region 28 disposed between the emitter region 34 and the drift region 26, a trench gate 40 extending in the body region 28 from the emitter region 34 toward the drift region 26, and a projecting portion 60 of an insulating material being in contact with a surface of the trench gate 40. At least a part of the projecting portion 60 projects within the drift region 26.

摘要翻译： IGBT 10包括n +型发射极区域34，n - 型漂移区26中，发射极区34和漂移区26中，沟槽栅极40的体区28延伸之间设置的p型体区28 从发射区34朝向漂移区26，以及由绝缘材料在接触与沟槽栅极40的至少漂移区26日60个内突出的突出部的一部分的表面上的凸部60