专利检索 ap:("Taiwan Semiconductor Manufacturing Company, Ltd.") AND inv:"JHAN, Yi-Ruei" 第 1 页

1.

发明公开
SEMICONDUCTOR FIN OR NANOWIRE DEVICES WITH STRAINED SOURCE/DRAIN REGIONS AND METHODS OF MANUFACTURING THEREOF 审中-公开

公开(公告)号：EP3937256A1

公开(公告)日：2022-01-12

申请号：EP21184739.7

申请日：2021-07-09

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： JHAN, Yi-Ruei , PAN, Kuang-Ting , CHIANG, Kuo-Cheng , CHENG, Kuan-Lun , WANG, Chih-Hao

IPC分类号： H01L29/775 , H01L29/786 , H01L21/336 , H01L29/08 , B82Y10/00 , H01L29/06 , H01L29/423 , H01L29/66 , H01L29/78

摘要： A semiconductor device includes a first active fin structure (300A) and a second active fin structure (300B) extending along a first lateral direction. The semiconductor device includes a dummy fin structure (600A), also extending along the first lateral direction, that is disposed between the first active fin structure and the second fin structure. The dummy fin structure includes a material, for example silicon nitride or silicon germanium, that is configured to induce mechanical deformation of a first source/drain structure (1100) coupled to an end of the first active fin structure and a second source/drain structure coupled to an end of the second active fin structure.