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    COMPOSITION OF SOLUTIONS AND CONDITIONS FOR USE ENABLING THE STRIPPING AND COMPLETE DISSOLUTION OF PHOTORESISTS
    2.
    发明公开
    COMPOSITION OF SOLUTIONS AND CONDITIONS FOR USE ENABLING THE STRIPPING AND COMPLETE DISSOLUTION OF PHOTORESISTS 审中-公开
    组合物中的FOR ABISOLIEREUNG和照片油漆全分辨率解决方案和条件

    公开(公告)号：EP2718767A1

    公开(公告)日：2014-04-16

    申请号：EP12730429.3

    申请日：2012-06-11

    申请人： Technic France

    发明人： DAVIOT, Jérôme ,  VERNIN, Philippe

    IPC分类号： G03F7/42 ,  C23G5/024

    CPC分类号： G03F7/423 ,  C23G5/032 ,  G03F7/422 ,  G03F7/426 ,  H01L21/31133

    摘要： The present invention relates to the formulation of a chemical, comprised of an ether solvent as the principal solvent, an ether or non-ether cosolvent, an acid, optionally a surfactant and optionally a corrosion inhibitor, dedicated to the complete and selective stripping by pure dissolution of photoresists (novolac and semi-novolac) of all thicknesses used in microelectronic component integration processes. Said solution is optimized to dissolve the polymer matrix while ensuring and protecting the physicochemical integrity of exposed materials such as metal interconnections (copper, aluminum), dielectrics (SiO2, MSQ, etc.) and adhesion and diffusion barriers (TiN, Ti, Ta, TaN, etc.). Furthermore, the singular cleaning properties and performance characteristics of these solutions make it possible to envisage the use thereof in a variety of industrial applications such as single wafer, batch, immersion and/or spray by simple adjustment of process time and temperature.

    SOLUTION AND METHOD FOR ETCHING TITANIUM BASED MATERIALS
    5.
    发明公开
    SOLUTION AND METHOD FOR ETCHING TITANIUM BASED MATERIALS 审中-公开

    公开(公告)号：EP3436621A1

    公开(公告)日：2019-02-06

    申请号：EP17713038.2

    申请日：2017-03-29

    申请人： Technic France

    发明人： PIZZETTI, Christian ,  CAZES, Marine ,  DAVIOT, Jérôme ,  VERNIN, Philippe

    IPC分类号： C23F1/38 ,  C09K13/02 ,  C11D11/00 ,  C23G1/20 ,  H01L21/02 ,  H01L21/3213 ,  H05K3/06

    CPC分类号： C23F1/38 ,  C09K13/02 ,  C23G1/205 ,  H01L21/32134

    摘要： The invention relates to a solution for etching titanium based materials, comprising from about 27 w % to about 39 w % hydrogen peroxide, from about 0.2 w % to about 0.5 w % potassium hydroxide, and at about 0.002 w % to about 0.02 w % 1,2-Diaminocyclohexane-N,N,N,N Tetra acetic Acid (CDTA), the rest being water, said solution comprising no corrosion inhibitor, and said solution having a pH comprised between about 7 and about 8. The invention further relates to a chemical composition for preparing such a solution by mixing said composition with concentrated hydrogen peroxide, said chemical composition comprising potassium hydroxide from about 5 w % to about 30 w %, C.D.T.A. at a concentration ranging from about 1% to about 5% of the potassium hydroxide concentration, the rest being water. The invention also relates to a method of etching a Titanium, Titanium nitride or Titanium Tungsten barrier layer from a microelectronic device, said method comprising contacting the Titanium, Titanium nitride or Titanium tungsten barrier layer with the solution for a time sufficient to remove the Titanium, Titanium nitride or Titanium tungsten barrier layer.