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1.发明公开TANTALUM CARBIDE, METHOD FOR PRODUCING TANTALUM CARBIDE, TANTALUM CARBIDE WIRING AND TANTALUM CARBIDE ELECTRODE 有权钽硬质合金，生产钽碳化物的方法，碳化钽导线和碳化钽电极
公开(公告)号：EP1666413A1
公开(公告)日：2006-06-07
申请号：EP04771326.8
申请日：2004-07-30
发明人： KANEKO, Tadaaki , ASAOKA, Yasushi , SANO, Naokatsu
CPC分类号： C23C8/02 , C23C8/20 , Y10T428/24917 , Y10T428/24926
摘要： It is an object of the present invention to provide a method for manufacturing tantalum carbide which can form tantalum carbide having a prescribed shape using a simple method, can form the tantalum carbide having a uniform thickness even when the tantalum carbide is coated on the surface of an article and is not peeled off by a thermal history, tantalum carbide obtained by the manufacturing method, wiring of tantalum carbide, and electrodes of tantalum carbide.
The tantalum carbide is formed on the surface of tantalum or a tantalum alloy by placing the tantalum or tantalum alloy in a vacuum heat treatment furnace, heat-treating the tantalum or tantalum alloy under a condition where a native oxide layer of Ta 2 O 5 formed on the surface of tantalum or tantalum alloy is sublimated to remove the Ta 2 O 5 , introducing a carbon source into the vacuum heat treatment furnace, and then heat-treating.摘要翻译： 本发明的目的是提供一种用简单的方法制造具有规定形状的碳化钽的碳化钽的方法，即使在碳化钽涂覆在碳化钽表面上时也能形成具有均匀厚度的碳化钽 制品的制造方法中得到的碳化钽，碳化钽的布线以及碳化钽的电极，因此不会因热历史而剥离。 碳化钽通过将钽或钽合金置于真空热处理炉中在钽或钽合金的表面上形成，在表面上形成的自然氧化物层Ta 2 O 5的条件下对钽或钽合金进行热处理 将钽或钽合金升华以除去Ta 2 O 5，将碳源引入真空热处理炉中，然后进行热处理。
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2.发明公开SINGLE CRYSTAL SILICON CARBIDE AND METHOD FOR PRODUCING THE SAME 审中-公开EERRISTALLINES SILICIUMCARBID UND VERFAHREN ZU SEINER HERSTELLUNG
公开(公告)号：EP1403404A1
公开(公告)日：2004-03-31
申请号：EP01934532.1
申请日：2001-06-04
发明人： KANEKO, Tadaaki , ASAOKA, Yasushi , SANO, Naokatsu
IPC分类号： C30B29/36
摘要： The invention is a high-temperature liquid phase growth method using a very thin Si melt layer and characterized in that there is no need of strict temperature difference control between the growing crystal surface and a raw material supply polycrystal, and control of impurity addition is possible. The grown single crystal SiC is characterized in that no fine grain boundaries exist therein, the density of micropipe defects in the growth surface is 1/cm 2 or less, and the crystal has a terrace of 10 micrometer or more and a multi-molecular layer step as the minimum unit of a three-molecular layer.
摘要翻译： 单晶碳化硅通过液相外延法形成，不具有微晶边界。 表面微孔缺陷的密度为1 / cm 2>以下。 还包括用于制备碳化硅的独立权利要求。
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