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    METHOD OF REMOVING A SUBSTRATE
    5.
    发明公开
    METHOD OF REMOVING A SUBSTRATE 审中-公开

    公开(公告)号：EP4411843A3

    公开(公告)日：2024-10-30

    申请号：EP24169398.5

    申请日：2018-05-07

    申请人： The Regents of the University of California

    发明人： KAMIKAWA, Takeshi ,  GANDROTHULA, Srinivas ,  LI, Hongjian ,  COHEN, Daniel A.

    IPC分类号： H01L21/683 ,  H01L33/00 ,  H01L33/20 ,  H01L33/32 ,  H01L33/46 ,  H01S5/343 ,  H01L21/02 ,  H01S5/02 ,  H01L23/00

    摘要： A method of removing a substrate, comprising: forming a growth restrict mask with a plurality of striped opening areas directly or indirectly upon a GaN-based substrate; and growing a plurality of semiconductor layers upon the GaN-based substrate using the growth restrict mask, such that the growth extends in a direction parallel to the striped opening areas of the growth restrict mask, and growth is stopped before the semiconductor layers coalesce, thereby resulting in island-like semiconductor layers. A device is processed for each of the island-like semiconductor layers. Etching is performed until at least a part of the growth restrict mask is exposed. The devices are then bonded to a support substrate. The GaN-based substrate is removed from the devices by a wet etching technique that at least partially dissolves the growth restrict mask. The GaN substrate that is removed then can be recycled.