公开(公告)号：EP1324402B1

公开(公告)日：2007-05-30

申请号：EP03001185.2

申请日：1996-04-04

申请人： The United States of America, represented by the Administrator of the National Aeronautics and Space Administration (NASA)

发明人： Hellbaum, Richard F. ,  Bryant, Robert G. ,  Fox, Robert L. ,  Jalink, Antony Jr. ,  W Rorhbach, Wayne ,  Simpson, Joycelyn O.

IPC分类号： B29C41/20 ,  B29C41/22 ,  B32B1/00 ,  H01L41/083 ,  H01L41/22 ,  H01L41/24 ,  H01L41/09

CPC分类号： B32B37/144 ,  H01L41/0926 ,  H01L41/313 ,  Y10T29/42

摘要： A method for forming ferroelectric wafers (10) is provided. A prestress layer (14) is placed on the desired mold. A ferroelectric wafer (12) is placed on top of the prestress layer. The layers are heated and then cooled, causing the ferroelectric wafer to become prestressed. The prestress layer may include reinforcing material and the ferroelectric wafer may include electrodes or electrode layers may be placed on either side of the ferroelectric layer. Wafers produced using this method have greatly improved output motion.

公开(公告)号：EP1324402A3

公开(公告)日：2005-11-09

申请号：EP03001185.2

申请日：1996-04-04

申请人： The United States of America, represented by the Administrator of the National Aeronautics and Space Administration (NASA)

发明人： Hellbaum, Richard F. ,  Bryant, Robert G. ,  Fox, Robert L. ,  Jalink, Antony Jr. ,  W Rorhbach, Wayne ,  Simpson, Joycelin O.

IPC分类号： B29C41/20 ,  B29C41/22 ,  B32B1/00 ,  H01L41/083 ,  H01L41/22 ,  H01L41/24 ,  H01L41/09

CPC分类号： B32B37/144 ,  H01L41/0926 ,  H01L41/313 ,  Y10T29/42

摘要： A method for forming ferroelectric wafers (10) is provided. A prestress layer (14) is placed on the desired mold. A ferroelectric wafer (12) is placed on top of the prestress layer. The layers are heated and then cooled, causing the ferroelectric wafer to become prestressed. The prestress layer may include reinforcing material and the ferroelectric wafer may include electrodes or electrode layers may be placed on either side of the ferroelectric layer. Wafers produced using this method have greatly improved output motion.

公开(公告)号：EP1324402A2

公开(公告)日：2003-07-02

申请号：EP03001185.2

申请日：1996-04-04

申请人： The United States of America, represented by the Administrator of the National Aeronautics and Space Administration (NASA)

发明人： Hellbaum, Richard F. ,  Bryant, Robert G. ,  Fox, Robert L. ,  Jalink, Antony Jr. ,  W Rorhbach, Wayne ,  Simpson, Joycelin O.

IPC分类号： H01L41/083 ,  H01L41/22 ,  H01L41/24 ,  B29C41/20 ,  B29C41/22 ,  B32B1/00

CPC分类号： B32B37/144 ,  H01L41/0926 ,  H01L41/313 ,  Y10T29/42

摘要： A method for forming ferroelectric wafers (10) is provided. A prestress layer (14) is placed on the desired mold. A ferroelectric wafer (12) is placed on top of the prestress layer. The layers are heated and then cooled, causing the ferroelectric wafer to become prestressed. The prestress layer may include reinforcing material and the ferroelectric wafer may include electrodes or electrode layers may be placed on either side of the ferroelectric layer. Wafers produced using this method have greatly improved output motion.

摘要翻译： 本发明提供一种用于形成铁电体晶片（10）的方法。 预应力层（14）被放置在所希望的模具中。 一种铁电晶片（12）放置在所述预应力层的顶部。 该层被加热，然后冷却，从而导致强电介质晶片成为预应力。 预应力层可以包括增强材料和铁电晶片可以包括电极或电极层可以在铁电层的任一侧放置的位置。 晶片使用这种方法有很大提高输出运动产生的。