TRANSPARENT ELECTRODES FOR SEMICONDUCTOR THIN FILM DEVICES
    2.
    发明公开
    TRANSPARENT ELECTRODES FOR SEMICONDUCTOR THIN FILM DEVICES 有权
    透明电极用于薄膜半导体器件

    公开(公告)号:EP2589093A1

    公开(公告)日:2013-05-08

    申请号:EP11743128.8

    申请日:2011-06-30

    IPC分类号: H01L51/00 H01L51/44 H01L51/42

    摘要: A method of producing a transparent electrode suitable for use in an organic semiconductor photovoltaic device. First and second silanes (3) are deposited from the vapour phase on a substrate (1) and bind to the surface of the substrate. A metal film (4) is then deposited from the vapour phase and binds to both the first and second silanes so as to produce a transparent metal layer having a thickness which is no greater than about 15 nanometres. The first silane is a non-amino functional silane and the second silane is an aminofunctional silane. The electrode may be flexible, using a polymer substrate (1). The metal film (4) may be provided with a plurality of apertures (5), provided for example by masking the substrate with microspheres (2) while depositing the metal and subsequently removing the microspheres, and / or annealing the metal so that apertures appear.