公开(公告)号：EP1912216A1

公开(公告)日：2008-04-16

申请号：EP06122288.1

申请日：2006-10-13

申请人： Thomson Holding Germany GmbH & Co. OHG

发明人： Knappmann, Stephan ,  Fery, Christophe ,  Pacearescu, Larisa ,  Pilard, Gael

IPC分类号： G11B7/257

CPC分类号： G11B7/2578 ,  Y10T428/21

摘要： The optical storage medium according to the invention uses a mask layer (2) as a super resolution near field structure, which comprises a doped semiconductor material. The semiconductor material is n-doped particularly such that the reflectivity of the semiconductor material is increased, for example for providing a reflectivity factor above 0,9, when irradiated with a laser beam. As a semiconductor material advantageously an indium alloy and as a doping material selenium or tellurium can be used. For the manufacturing of a respective optical storage medium a sputtering method for depositing the doped semiconductor as the mask layer can be used, wherein the semiconductor material is for example InSb and the dopant is included already in the semiconductor sputtering target.

摘要翻译： 根据本发明的光学存储介质使用掩模层（2）作为超分辨率近场结构，其包括掺杂的半导体材料。 半导体材料特别是n掺杂，使得当用激光束照射时，半导体材料的反射率增加，例如用于提供大于0.9的反射率。 作为半导体材料，可以使用铟合金和掺杂材料硒或碲。 为了制造相应的光存储介质，可以使用用于沉积掺杂半导体作为掩模层的溅射方法，其中半导体材料例如是InSb，并且掺杂剂已经包括在半导体溅射靶中。