公开(公告)号：EP1494269A1

公开(公告)日：2005-01-05

申请号：EP03745948.4

申请日：2003-04-07

申请人： Tokyo University of Agriculture and Technology TLO Co., Ltd.

发明人： KOUKITSU, Akinori, The Faculty of Tech. Tokyo ,  KUMAGAI, Yoshinao, The Faculty of Tech. Tokyo ,  MARUI, Tomohiro, The Faculty of Tech. Tokyo

IPC分类号： H01L21/205 ,  C30B23/02 ,  C30B25/14 ,  C30B29/38 ,  C30B29/40 ,  C23C16/34

CPC分类号： C30B25/02 ,  C23C16/303 ,  C30B25/14 ,  C30B29/403 ,  Y10T117/10 ,  Y10T117/1016

摘要： A method for growing a crystal of an Al-containing III-V group compound semiconductor by the conventional HVPE method, characterized in that it comprises a step of reacting Al with hydrogen halide at a temperature of 700°C or lower to form a halide of Al. The method has allowed the suppression of the formation of aluminum chloride (AlCl) or aluminum bromide (AlBr) reacting violently with quartz, which is the material of a reaction vessel for the growth, resulting in the achievement of the vapor phase growth of an Al-containing III-V group compound semiconductor at a rate of 100 microns/hr or more, which has lead to the mass-production of a substrate and a semiconductor element having satisfactory resistance to adverse environment.