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    Vapor deposition apparatus and vapor deposition method
    1.
    发明公开
    Vapor deposition apparatus and vapor deposition method 失效
    Anlage und Verfahren zur Abscheidung aus der Dampfphase

    公开(公告)号：EP0849775A2

    公开(公告)日：1998-06-24

    申请号：EP97122152.8

    申请日：1997-12-16

    申请人： Toshiba Ceramics Co., Ltd.

    发明人： Ohashi, Tadashi ,  Chaki, Katuhiro ,  Xin, Ping ,  Fujii, Tatsuo ,  Iwata, Katsuyuki ,  Mitani, Shinichi ,  Honda, Takaaki

    IPC分类号： H01L21/203 ,  C30B23/02 ,  C30B25/02 ,  C23C14/24 ,  C23C14/56

    CPC分类号： C23C16/45508 ,  C23C16/4401 ,  C23C16/455 ,  C23C16/54 ,  C30B25/14 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262

    摘要： A vapor deposition apparatus for supplying raw-material gas into a reactor to form a thin film on a wafer substrate disposed in the reactor by vapor deposition, including at least a rotator for mounting the wafer substrate thereon, a treatment gas introducing port, a straightening vane having plural holes, and a wafer substrate feed-in/out port, wherein the lowermost portion of the wafer feed-in/out port is located at a predetermined height from the upper surface of the rotator, and the difference in height between the lowermost portion of the wafer feed-in/out port and the upper surface of the rotator is set to be larger than the thickness of a transition layer of the upper portion of the rotator. In a vapor deposition method, a wafer substrate is mounted on the rotator to form a thin film having little defect and uniform film thickness on the wafer substrate by using the vapor deposition apparatus.

    摘要翻译： 一种气相沉积装置，用于将原材料气体供应到反应器中，通过气相沉积在设置在反应器中的晶片基板上形成薄膜，至少包括用于将晶片基板安装在其上的旋转体，处理气体导入口，矫直 具有多个孔的叶片和晶片基板馈入/出口，其中晶片进/出端口的最下部分位于距转子的上表面预定的高度处， 晶片进/出端口的最下部分和转子的上表面被设定为大于转子上部的过渡层的厚度。 在气相沉积方法中，通过使用蒸镀装置，将晶片基板安装在旋转体上，从而在晶片基板上形成缺陷少，膜厚均匀的薄膜。

    Vapor deposition apparatus and method for forming thin film
    2.
    发明公开
    Vapor deposition apparatus and method for forming thin film 失效
    Aufdampfungsvorrichtung zur Herstellung vonDünnfilmen

    公开(公告)号：EP0854210A1

    公开(公告)日：1998-07-22

    申请号：EP97122056.1

    申请日：1997-12-15

    申请人： Toshiba Ceramics Co., Ltd.

    发明人： Ohashi, Tadashi ,  Chaki, Katuhiro ,  Xin, Ping ,  Fujii, Tatsuo ,  Iwata, Katsuyuki ,  Mitani, Shinichi ,  Honda, Takaaki

    IPC分类号： C30B25/14 ,  C23C16/44

    CPC分类号： C23C16/45574 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45502 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/45576 ,  C23C16/4584 ,  C30B25/14

    摘要： There are provided a vapor deposition apparatus including plural gas supply ports at the top portion of a hollow reactor, an exhaust port at the bottom portion of the reactor, a rotational substrate holder which is provided inside the reactor and on which a wafer substrate is mounted, and a straightening vane which is provided at the upper portion in the reactor and has plural gas holes formed therein, reaction gas being supplied into the reactor to form a thin film on the surface of the wafer substrate on the rotational substrate holder by vapor deposition, in which the flow rate of the reaction gas in the center portion of the reactor and the gas flow rate of the reaction gas in the outer peripheral portion are different from each other, a vapor deposition apparatus in which the hollow inside of the reactor is sectioned into upper and lower portions which are different in equivalent inner diameter, the equivalent inner diameter of the upper portion is smaller than the equivalent inner diameter of the lower portion and the lower end of the upper portion and the upper end of the lower portion are connected to each other by a link portion to make the hollow inside of the reactor continuous over the upper and lower portions, and in which the link portion is provided with straightening gas flow-out holes, and the rotational substrate holder is located at a position lower than the lower end of the upper portion in the lower portion of said reactor by a predetermined height difference, and a vapor deposition method using each of the above vapor deposition apparatuses. The apparatus of the present invention is suitably applied to a process of manufacturing semiconductor wafer substrates which are required to be high in quality. Further, according to the apparatus and method of the present invention, no particle occurs in vapor phase in the reactor, there is little deposit on the inner wall of the reactor, the maintenance of the apparatus is long, and a thin film having a uniform film thickness can be formed on a wafer substrate, so that there can be provided a homogeneous thin-film formed semiconductor wafer substrate having no dispersion in resistance value and little crystal defect.

    摘要翻译： 提供了一种气相沉积装置，在中空反应器的顶部包括多个气体供给口，反应器底部的排气口，设置在反应器内部并安装有晶片基板的旋转基板保持件 以及设置在反应器的上部并具有形成在其中的多个气孔的矫直叶片，将反应气体供给到反应器中，以通过气相沉积在旋转基板保持器上在晶片基板的表面上形成薄膜 其中反应器中心部分中的反应气体的流量和外周部分中的反应气体的气体流量彼此不同，其中反应器的中空内部为 分成等效内径不同的上部和下部，上部的等效内径小于等效内径 r的下部和下部的下端以及下部的上端通过连接部彼此连接，使得反应器的中空内部连续地在上部和下部，并且其中 连杆部设有矫直气体流出孔，旋转基板保持件位于比反应器下部的上部下端低一定位置的位置，气相沉积法 使用上述各蒸镀装置。 本发明的装置适用于要求质量高的半导体晶片基板的制造工序。 此外，根据本发明的装置和方法，在反应器中不产生气相中的颗粒，在反应器的内壁上几乎没有沉积物，设备的维护长，并且具有均匀的薄膜 可以在晶片基板上形成膜厚，从而可以提供均匀的薄膜形成的半导体晶片基板，其电阻值不分散，晶体缺陷少。