公开(公告)号：EP3042978B1

公开(公告)日：2020-07-29

申请号：EP14843041.6

申请日：2014-08-25

Applicant: Toyo Kohan Co., Ltd.

Inventor： HASHIMOTO Yusuke ,  KUROKAWA Teppei ,  KOSHIRO Takashi ,  OKAYAMA Hironao ,  NAGAISHI Tatsuoki ,  OHKI Kotaro ,  HONDA Genki

IPC: C23C14/35 ,  C23C28/00 ,  C30B29/22 ,  H01B13/00 ,  H01B12/06 ,  C30B29/16 ,  C23C14/08 ,  H01L39/24 ,  C30B23/02

公开(公告)号：EP3042978A1

公开(公告)日：2016-07-13

申请号：EP14843041.6

申请日：2014-08-25

Applicant: Toyo Kohan Co., Ltd.

Inventor： HASHIMOTO Yusuke ,  KUROKAWA Teppei ,  KOSHIRO Takashi ,  OKAYAMA Hironao ,  NAGAISHI Tatsuoki ,  OHKI Kotaro ,  HONDA Genki

IPC: C23C14/35 ,  C23C14/08 ,  C30B29/16 ,  H01B12/06 ,  H01B13/00 ,  C30B29/22

Abstract: This invention provides a method for forming an oxide layer on a metal substrate, which enables manufacture of an oxide layer with improved crystal orientation in comparison with that of the outermost layer of a metal substrate. The method for forming an oxide layer on a metal substrate 20 via RF magnetron sputtering comprises a step of subjecting the crystal-oriented metal substrate 20 exhibiting a c-axis orientation of 99% on its outermost layer to RF magnetron sputtering while adjusting the angle α formed by a perpendicular at a film formation position 20a on the metal substrate 20 and a line from the film formation position 20a to a point 10a at which the perpendicular magnetic flux density is zero on the target 10 located at the position nearest to the film formation position 20a to 15 degrees or less.

公开(公告)号：EP3127647B1

公开(公告)日：2020-08-12

申请号：EP15772918.7

申请日：2015-03-27

Applicant: Toyo Kohan Co., Ltd.

Inventor： NANBU Kouji ,  KUROKAWA Teppei ,  KOSHIRO Takashi ,  OKAYAMA Hironao

IPC: B23K20/00 ,  B32B15/01 ,  B23K35/02 ,  B23K20/04 ,  B23K20/227 ,  H01J37/34 ,  B23K20/16 ,  B23K20/24 ,  B23K20/02 ,  B23K103/02 ,  B23K103/04 ,  B23K103/08 ,  B23K103/10 ,  B23K103/14 ,  B23K103/16 ,  B23K103/18 ,  B23K103/20

公开(公告)号：EP3127647A1

公开(公告)日：2017-02-08

申请号：EP15772918.7

申请日：2015-03-27

Applicant: Toyo Kohan Co., Ltd.

Inventor： NANBU Kouji ,  KUROKAWA Teppei ,  KOSHIRO Takashi ,  OKAYAMA Hironao

IPC: B23K20/00 ,  B32B15/01

CPC classification number: B23K20/2275 ,  B23K20/002 ,  B23K20/023 ,  B23K20/04 ,  B23K20/16 ,  B23K20/24 ,  B23K35/0238 ,  B23K2103/02 ,  B23K2103/05 ,  B23K2103/08 ,  B23K2103/10 ,  B23K2103/14 ,  B23K2103/15 ,  B23K2103/166 ,  B23K2103/18 ,  B23K2103/20 ,  B23K2103/26 ,  B32B15/01 ,  B32B15/012 ,  B32B15/043 ,  B32B15/18 ,  B32B15/20 ,  C23F4/04 ,  H01J37/34

Abstract: An object of the present invention is to provide a method for producing a metal laminate material that maintains sufficient bonding strength and has superior production efficiency. A method for producing a metal laminate material by bonding two sheets, one sheet composed of a material M1 and the other sheet composed of a material M2, wherein each of M1 and M2 is a metal or alloy comprising any one or more selected from the group consisting of Mg, Al, Ti, Cr, Mn, Fe, Co, Ni, Cu, Zn, Nb, Mo, Pd, Ag, In, Sn, Hf, Ta, W, Pb, and Bi, comprises the steps of: subjecting the faces of the two sheets to be bonded to sputtering treatment with inert gas ions under vacuum such that oxide layers on surface layers remain; temporarily bonding the two sheets by roll pressure bonding; and conducting a thermal treatment to thereby bond the two sheets, and, when Tm1 > Tm2 where Tm1(K) is the melting point of M1 and Tm2(K) is the melting point of M2, the temperature of the thermal treatment is 0.45Tm2 or more and less than 0.45Tm1, provided that the temperature is not more than Tm2.

Abstract translation: 本发明的目的在于提供一种能够保持充分的接合强度并且生产效率优异的金属层压材料的制造方法。 一种金属层叠材料的制造方法，其特征在于，通过将两片材料接合而成的金属层叠体的制造方法，由材料M1构成的一片和由所述材料M2构成的另一片材，其中，所述M1和M2各自为金属或合金， 由Mg，Al，Ti，Cr，Mn，Fe，Co，Ni，Cu，Zn，Nb，Mo，Pd，Ag，In，Sn，Hf，Ta，W，Pb和Bi组成，包括以下步骤： 在惰性气体离子的真空下对两片的表面进行接合以进行溅射处理，使得保留表面层上的氧化物层; 通过辊压粘合暂时粘接两片; 进行热处理，从而使两片结合，Tm1> Tm2，Tm1（K）为M1的熔点，Tm2（K）为M2的熔点，热处理温度为0.45Tm 2 或更多且小于0.45Tm1，条件是温度不大于Tm2。

公开(公告)号：EP3043359A1

公开(公告)日：2016-07-13

申请号：EP14842998.8

申请日：2014-08-06

Applicant: Toyo Kohan Co., Ltd. ,  Sumitomo Electric Industries, Ltd.

Inventor： KUROKAWA Teppei ,  KOSHIRO Takashi ,  OKAYAMA Hironao

IPC: H01B12/06 ,  B23K20/00 ,  C01G1/00 ,  C22C9/00 ,  C22C9/01 ,  C22C9/02 ,  C22C9/04 ,  C22C9/06 ,  C22C19/03 ,  C22F1/00 ,  C22F1/08 ,  C22F1/10 ,  H01B13/00

CPC classification number: H01B12/06 ,  B23K31/02 ,  C22C9/00 ,  C22F1/08 ,  C22F1/10 ,  H01B13/0016 ,  H01L39/2454

Abstract: This invention provides a substrate for a superconducting wire used for manufacturing a superconducting wire with excellent superconductivity and a method for manufacturing the same. Such substrate for a superconducting wire has crystal orientation of metals on the outermost layer, such as a c-axis orientation rate of 99% or higher and a Δϕ of 6 degrees or less, and a percentage of an area in which the crystal orientation is deviated by 6 degrees or more from the (001) [100] per unit area is 6% or less.