公开(公告)号：EP1735838A2

公开(公告)日：2006-12-27

申请号：EP05744389.7

申请日：2005-04-15

申请人： Trustees of Boston University

发明人： MOUSTAKAS, Theodore, D. ,  CABALU, Jasper, S.

IPC分类号： H01L29/24

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L29/155 ,  H01L29/2003 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/184 ,  H01L31/1852 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  Y02E10/544

摘要： A semiconductor sensor, solar cell or emitter or a precursor therefore having a substrate and textured semiconductor layer deposited onto the substrate. The layer can be textured as grown on the substrate or textured by replicating a textured substrate surface. The substrate or first layer is then a template for growing and texturing other semiconductor layers from the device. The textured layers are replicated to the surface from the substrate to enhance light extraction or light absorption. Multiple quantum wells, comprising several barrier and quantum well layers, are deposited as alternating textured layers. The texturing in the region of the quantum well layers greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. This is the case in nitride semiconductors grown along the polar [0001] or [000-1] directions.

公开(公告)号：EP1735838B1

公开(公告)日：2011-10-05

申请号：EP05744389.7

申请日：2005-04-15

申请人： Trustees of Boston University

发明人： MOUSTAKAS, Theodore, D. ,  CABALU, Jasper, S.

IPC分类号： G02F1/017 ,  H01L21/20 ,  H01L21/18 ,  H01L21/302

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L29/155 ,  H01L29/2003 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/184 ,  H01L31/1852 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  Y02E10/544

摘要： A semiconductor sensor, solar cell or emitter or a precursor therefore having a substrate and textured semiconductor layer deposited onto the substrate. The layer can be textured as grown on the substrate or textured by replicating a textured substrate surface. The substrate or first layer is then a template for growing and texturing other semiconductor layers from the device. The textured layers are replicated to the surface from the substrate to enhance light extraction or light absorption. Multiple quantum wells, comprising several barrier and quantum well layers, are deposited as alternating textured layers. The texturing in the region of the quantum well layers greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. This is the case in nitride semiconductors grown along the polar [0001] or [000-1] directions.

摘要翻译： 因此，半导体传感器，太阳能电池或发射器或前体具有沉积在衬底上的衬底和织构化半导体层。 该层可以在基底上生长时被纹理化，或者通过复制纹理化基底表面而被纹理化。 然后衬底或第一层是用于从器件生长和纹理化其他半导体层的模板。 纹理层从基底复制到表面以增强光提取或光吸收。 包含多个势垒层和量子阱层的多个量子阱被沉积为交替纹理层。 如果半导体是极性的并且量子阱沿着极性方向生长，则量子阱层的区域中的纹理极大地提高了内部量子效率。 沿极性[0001]或[000-1]方向生长的氮化物半导体就是这种情况。