公开(公告)号：EP0894154A4

公开(公告)日：2002-02-13

申请号：EP97914770

申请日：1997-02-21

申请人： UNIV CALIFORNIA

发明人： BAKER SHERRY L ,  VERNON STEPHEN P ,  STEARNS DANIEL G

IPC分类号： G02B5/26 ,  C23F4/00 ,  G02B1/10 ,  G02B5/28 ,  G03F7/20 ,  C23C14/58

CPC分类号： G02B5/0891 ,  C23F4/00 ,  G03F7/70958

摘要： Mo/Si multilayers are removed from superpolished ZERODUR and fused silica substrates with a dry etching process that, under suitable processing conditions, produces negligible change in either the substrate surface figure or surface roughness. The two-step dry etching process removes a silicon dioxide overlayer with a fluorine-containing gas and then removes molybdenum and silicon multilayers with a chlorine-containing gas. Full recovery of the initial normal incidence extreme ultra-violet (EUV) reflectance response has been demonstrated on reprocessed substrates.