公开(公告)号：EP3037569A4

公开(公告)日：2017-01-11

申请号：EP13890707

申请日：2013-08-13

申请人： UNIV KONKUK IND COOP CORP

发明人： MIN YO-SEP

IPC分类号： C23C16/448 ,  C01G39/06 ,  C23C16/06 ,  C23C16/30 ,  C23C16/44 ,  C23C16/455

CPC分类号： C23C16/305 ,  C01G39/06 ,  C23C16/44 ,  C23C16/45527 ,  C23C16/45553 ,  C23C16/45555

摘要： The present disclosure relates to a MoS 2 thin film and a method for manufacturing the same. The present disclosure provides a MoS 2 thin film and a method for manufacturing the same using an atomic layer deposition method. In particular, the MoS 2 thin film is manufactured by an atomic layer deposition method without using a toxic gas such as H 2 S as a sulfur precursor. Thus, the present disclosure is eco-friendly. Furthermore, it is possible to prevent the damage and contamination of manufacturing equipment during the manufacturing process. In addition, it is possible to manufacture the MoS 2 thin film by precisely controlling the thickness of the MoS 2 thin film to the level of an atomic layer.

摘要翻译： 本发明涉及一种MoS 2薄膜及其制造方法。 本公开提供了一种MoS 2薄膜及其使用原子层沉积方法制造该薄膜的方法。 特别地，MoS 2薄膜是通过原子层沉积方法制造的，而不使用有毒气体如H 2 S作为硫前体。 因此，本公开是环保的。 此外，可以防止在制造过程中制造设备的损坏和污染。 此外，通过将MoS 2薄膜的厚度精确地控制到原子层的水平，可以制造MoS 2薄膜。