公开(公告)号：EP2221864A3

公开(公告)日：2010-11-03

申请号：EP10163473.1

申请日：2006-12-04

申请人： Ulvac, Inc.

发明人： Yoshihama, Tomoyuki ,  Harada, Masamichi ,  Toyoda, Satoru ,  Ushikawa, Harunori

IPC分类号： H01L21/768 ,  H01L23/532

CPC分类号： H01L23/53238 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76864 ,  H01L21/76877 ,  H01L2924/0002 ,  H01L2924/00

摘要： As a barrier metal film, a Ti film or a Ta film is formed by sputtering method on a substrate. On top of this barrier metal film there is formed a molecular layer containing nitrogen atoms by causing the barrier metal film to absorb gas containing nitrogen atoms. A Cu film is then formed on the nitride film by CVD method and thereafter anneal processing is performed at 100 to 400°C. In this manner, by forming the Cu film, the adhesiveness between the barrier metal film and the Cu film improves.

公开(公告)号：EP2221864A2

公开(公告)日：2010-08-25

申请号：EP10163473.1

申请日：2006-12-04

申请人： Ulvac, Inc.

发明人： Yoshihama, Tomoyuki ,  Harada, Masamichi ,  Toyoda, Satoru ,  Ushikawa, Harunori

IPC分类号： H01L21/768 ,  H01L23/532

CPC分类号： H01L23/53238 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76864 ,  H01L21/76877 ,  H01L2924/0002 ,  H01L2924/00

摘要： As a barrier metal film, a Ti film or a Ta film is formed by sputtering method on a substrate. On top of this barrier metal film there is formed a molecular layer containing nitrogen atoms by causing the barrier metal film to absorb gas containing nitrogen atoms. A Cu film is then formed on the nitride film by CVD method and thereafter anneal processing is performed at 100 to 400°C. In this manner, by forming the Cu film, the adhesiveness between the barrier metal film and the Cu film improves.

摘要翻译： 作为阻挡金属膜，通过溅射法在基板上形成Ti膜或Ta膜。 在该阻挡金属膜的顶部，通过使阻挡金属膜吸收含有氮原子的气体，形成含有氮原子的分子层。 然后通过CVD法在氮化物膜上形成Cu膜，然后在100〜400℃下进行退火处理。 以这种方式，通过形成Cu膜，阻挡金属膜和Cu膜之间的粘合性提高。

公开(公告)号：EP2221864B1

公开(公告)日：2018-04-11

申请号：EP10163473.1

申请日：2006-12-04

申请人： Ulvac, Inc.

发明人： Yoshihama, Tomoyuki ,  Harada, Masamichi ,  Toyoda, Satoru ,  Ushikawa, Harunori

IPC分类号： H01L21/768 ,  H01L23/532

CPC分类号： H01L23/53238 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76864 ,  H01L21/76877 ,  H01L2924/0002 ,  H01L2924/00

摘要： As a barrier metal film, a Ti film or a Ta film is formed by sputtering method on a substrate. On top of this barrier metal film there is formed a nitride film by sputtering method. A Cu film is then formed on the nitride film by CVD method and thereafter anneal processing is performed at 100 to 400°C. In this manner, by forming the Cu film, the adhesiveness between the barrier metal film and the Cu film improves.