公开(公告)号：EP4344794A2

公开(公告)日：2024-04-03

申请号：EP24157497.9

申请日：2009-11-18

申请人： Unilin, BV

发明人： SCHACHT, Benny ,  TACK, Filip

IPC分类号： B05D1/26

摘要： Method for manufacturing coated panels (1) of the type comprising at least a substrate (2) and a top layer (3) with a motif, said top layer being provided on said substrate (2), wherein the method for manufacturing the top layer (3) comprises at least two steps, namely, a first step (S4), in which a synthetic material layer (7) is provided on the substrate (2), and a second subsequent step (S5), in which a relief is provided on the surface of said synthetic material layer (7), characterized in that said relief comprises a pattern of recesses (13) and/or projections (14), wherein this relief is obtained by providing a mask (22) underneath said synthetic material layer (7) wherein this mask enables a selective treatment of the synthetic material layer and subsequently performing a material-removing or material-depositing treatment on said synthetic material layer (7), wherein said mask (22) at least partially determines said pattern.

公开(公告)号：EP4344794A3

公开(公告)日：2024-04-10

申请号：EP24157497.9

申请日：2009-11-18

申请人： Unilin, BV

发明人： SCHACHT, Benny ,  TACK, Filip

IPC分类号： B44C5/04 ,  B44C1/22 ,  B44C1/20 ,  B44C1/10 ,  B05D3/12 ,  B05D5/02 ,  B05D5/06 ,  B05D7/06 ,  E04F13/08 ,  E04F15/02 ,  B05D1/26

摘要： Method for manufacturing coated panels (1) of the type comprising at least a substrate (2) and a top layer (3) with a motif, said top layer being provided on said substrate (2), wherein the method for manufacturing the top layer (3) comprises at least two steps, namely, a first step (S4), in which a synthetic material layer (7) is provided on the substrate (2), and a second subsequent step (S5), in which a relief is provided on the surface of said synthetic material layer (7), characterized in that said relief comprises a pattern of recesses (13) and/or projections (14), wherein this relief is obtained by providing a mask (22) underneath said synthetic material layer (7) wherein this mask enables a selective treatment of the synthetic material layer and subsequently performing a material-removing or material-depositing treatment on said synthetic material layer (7), wherein said mask (22) at least partially determines said pattern.