公开(公告)号：EP2033227A4

公开(公告)日：2013-07-17

申请号：EP07762196

申请日：2007-05-15

申请人： WISCONSIN ALUMNI RES FOUND

发明人： LAGALLY MAX G ,  MA ZHENQIANG

IPC分类号： H01L31/105 ,  H01L27/144 ,  H01L27/146 ,  H01L29/04 ,  H01L31/028 ,  H01L31/18

CPC分类号： H01L31/028 ,  H01L27/1446 ,  H01L27/14643 ,  H01L31/105 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： The present invention provides high-speed, high-efficiency PIN diodes for use in photodetector and CMOS imagers. The PIN diodes include a layer of intrinsic semiconducting material, such as intrinsic Ge or intrinsic GeSi, disposed between two tunneling barrier layers of silicon oxide. The two tunneling barrier layers are themselves disposed between a layer of n-type silicon and a layer of p-type silicon.

公开(公告)号：EP1834348A4

公开(公告)日：2009-12-23

申请号：EP05849194

申请日：2005-11-18

申请人： WISCONSIN ALUMNI RES FOUND

发明人： SAVAGE DONALD E ,  ROBERTS MICHELLE M ,  LAGALLY MAX G

IPC分类号： H01L21/36 ,  H01L29/04

CPC分类号： H01L21/6835 ,  H01L21/76256 ,  H01L21/84 ,  H01L29/0657 ,  H01L2221/6835

公开(公告)号：EP0116083A4

公开(公告)日：1985-02-18

申请号：EP83902720

申请日：1983-07-29

申请人： WISCONSIN ALUMNI RES FOUND

发明人： MARTIN JOE A ,  LAGALLY MAX G

IPC分类号： G01N23/225 ,  H01J1/304 ,  H01J37/073 ,  H01J19/24 ,  H01J19/32 ,  H01J29/46

CPC分类号： H01J37/073