公开(公告)号：EP4361323A1

公开(公告)日：2024-05-01

申请号：EP22827001.3

申请日：2022-02-16

申请人： Wafer Works Epitaxial Corp.

发明人： GU, Guangan ,  CHEN, Jiangang ,  WANG, Junjie

IPC分类号： C30B23/02 ,  C30B25/14 ,  C30B31/16

CPC分类号： C30B31/16 ,  C30B25/14 ,  C30B23/02 ,  C30B31/06 ,  C30B25/16 ,  C30B25/02

摘要： The invention relates to a diluting device for epitaxial doping gas, comprising a first pipeline through which doping gas passes, a concentration detection mechanism and a first flow control mechanism being provided on the first pipeline; and a controller, signally connected to the concentration detection mechanism and the first flow control mechanism. Diluted doping gas provided by the diluting device disclosed in the present invention has a stable concentration, ensuring the obtained epitaxial layer has a stable resistivity.

公开(公告)号：EP4350739A1

公开(公告)日：2024-04-10

申请号：EP22814742.7

申请日：2022-02-16

申请人： Wafer Works Epitaxial Corp.

发明人： CAO, Jianping ,  CHEN, Jiangang ,  ZHANG, Jian ,  SHI, Haifeng

IPC分类号： H01L21/02 ,  H01L21/67

摘要： The invention relates to the manufacture of semiconductor devices, and more particularly, to an epitaxial growth method and device. The epitaxial growth method is to provide cooling gas entering a cooling chamber from a reaction gas outlet in an epitaxial growth process. The epitaxial growth device comprises a cooling gas inlet which is distributed in a position, close to the reaction gas outlet, of the cooling chamber. According to the epitaxial growth method and the epitaxial growth device disclosed in the present invention, epitaxial growth of 50 um thick film on a 300 mm silicon wafer can be completed at one time without forming a covering layer on the reaction chamber.