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公开(公告)号：EP0057563A2
公开(公告)日：1982-08-11
申请号：EP82300400.7
申请日：1982-01-27
CPC分类号： H01L27/0218 , G05F1/467
摘要： In a CMOS integrated circuit certain high-impedance nodes are particularly susceptible to noise signals from the power supply. The power supply noise rejection is improved by using transistors 72, 74 of one type only, which are formed in tubs, such as N-channel transistors formed in P-type tubs in an N-type substrate, for connection to the critical high-impedance nodes 76. The tubs of these transistors are preferably connected (via 70) to an on-chip regulated power supply 66, 68. Noise rejection is further improved by grounded tubs underlying any conductive runners 80, 82 and capacitors 84 connected to the critical nodes 76.
摘要翻译： 在CMOS集成电路中，某些高阻抗节点对来自电源的噪声信号特别敏感。 通过仅使用一种类型的晶体管72,74来改善电源噪声抑制，所述晶体管形成在诸如在N型衬底中的P型槽中形成的N沟道晶体管的槽中， 阻抗节点76.这些晶体管的槽优选地连接（经由70）到片上稳压电源66,68。通过任何导电流道80,82下方的接地桶和连接到临界电源66,68的电容器84来进一步改善噪声抑制 节点76。
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公开(公告)号：EP0057563B1
公开(公告)日：1985-07-31
申请号：EP82300400.7
申请日：1982-01-27
CPC分类号： H01L27/0218 , G05F1/467
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公开(公告)号：EP0057563A3
公开(公告)日：1983-01-26
申请号：EP82300400
申请日：1982-01-27
CPC分类号： H01L27/0218 , G05F1/467
摘要： In a CMOS integrated circuit certain high-impedance nodes are particularly susceptible to noise signals from the power supply. The power supply noise rejection is improved by using transistors 72, 74 of one type only, which are formed in tubs, such as N-channel transistors formed in P-type tubs in an N-type substrate, for connection to the critical high-impedance nodes 76. The tubs of these transistors are preferably connected (via 70) to an on-chip regulated power supply 66, 68. Noise rejection is further improved by grounded tubs underlying any conductive runners 80, 82 and capacitors 84 connected to the critical nodes 76.
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