公开(公告)号：EP4266369A1

公开(公告)日：2023-10-25

申请号：EP22778678.7

申请日：2022-03-22

申请人： Yangtze Memory Technologies Co., Ltd.

发明人： HU, Siping

IPC分类号： H01L27/11578

摘要： The present disclosure provides a three-dimensional memory device and a manufacturing method thereof, and a three-dimensional memory. The three-dimensional memory device comprises a first memory cell and at least one second memory cell sequentially stacked on the first memory cell. Each memory cell comprises a first set of contacts, and a memory array device and a CMOS device that are stacked and electrically connected with each other, and the first set of contacts is disposed on a side of the memory array device facing away from the CMOS device and electrically connected with the CMOS device. The second memory cell further comprises a second set of contacts that is disposed on a side of the CMOS device facing away from the memory array device and electrically connected with the CMOS device. The memory array device of the first memory cell is bonded with the CMOS device of the adjacent second memory cell, and the first set of contacts of the first memory cell is correspondingly electrically connected with the second set of contacts of the adjacent second memory cell.

公开(公告)号：EP4150672A1

公开(公告)日：2023-03-22

申请号：EP20964575.3

申请日：2020-12-09

申请人： Yangtze Memory Technologies Co., Ltd.

发明人： WANG, Yongqing ,  HU, Siping

IPC分类号： H01L27/1157 ,  H01L27/11573