公开(公告)号：EP2342758A2

公开(公告)日：2011-07-13

申请号：EP09788336.7

申请日：2009-09-23

申请人： Advanced Surface Technology B.V.

发明人： MEESTER, Benard ,  NANU, Marius

IPC分类号： H01L31/055 ,  H01L31/032 ,  H01L31/075

CPC分类号： H01L31/055 ,  H01L31/032 ,  H01L31/0323 ,  Y02E10/52 ,  Y02E10/541 ,  Y02P70/521

摘要： A solar cell is provided with a down-converter that converts incoming high energy photons into two or lower energy photons before conversion to electric current, in order to provide for more efficient conversion. The down-converter comprises a combination of Neodymium and Ytterbium ions in a sulfide. The sulfide may ne Indium Sulfide, doped with the Neodymium and Ytterbium. The indium sulfide may be combined with a CIS (Copper Indium Sulfide layer to form active layers of a solar cell, or the sulfide with Neodymium and Ytterbium may be used as a separate filter before conversion to electric current. A solar cell may be provided with an up converter realized by means of quantum dots in an absorber matrix.

摘要翻译： 太阳能电池配备有下转换器，其在转换为电流之前将进入的高能光子转换成两个或更低能量的光子，以提供更有效的转换。 下变频器包含硫化物中的钕和镱离子的组合。 硫化物可能含有掺杂了钕和镱的铟硫化物。 硫化铟可以与CIS（铜铟硫化物层）结合以形成太阳能电池的活性层，或者可以在转换为电流之前将具有钕和镱的硫化物用作单独的过滤器。可以提供太阳能电池 上变频器通过吸收体矩阵中的量子点实现。

公开(公告)号：EP2058864A1

公开(公告)日：2009-05-13

申请号：EP07120094.3

申请日：2007-11-06

申请人： Advanced Surface Technology B.V.

发明人： Nanu, Marian ,  Meester, Bernard

IPC分类号： H01L31/032

CPC分类号： H01L31/032 ,  H01L31/0322 ,  Y02E10/541 ,  Y02P70/521

摘要： A thin-film solar cell comprising homojunctions between quaternary chalcogenide compounds is proposed. By using a chalcogenide layer of for example a Cu 2 A X(d) B Y(d) Z 4 compound with amounts of A and B that vary with depth, d, in the chalcogenide layer, sufficient freedom is obtained to realize a transition from n-type to p-type conductivity in the chalcogenide layer without changing the lattice structure and with minimum change of lattice constant. This allows to obtain solar cells with good energy conversion efficiencies.
Two solar cell embodiments are described. In the first embodiment, a p-i-n configuration is realised by deposition of a layer of Cu 2 A X(d) B Y(d) Z 4 quaternary chalcogenide in which relative amount of elements A and B varies with the depth so as to result in a change in conductivity from p-type to n-type, including a part of the layer with intrinsic conductivity. The n-type contact layer (NC), the photovoltaic layer (PV). and the p-type contact layer (PC) have respective crystal lattices that mutually are substantially coherent so as to form homojunctions. In the second embodiment a p-n configuration is realised by deposition of a layer of Cu 2 A X(d) B Y(d) Z 4 quaternary chalcogenide in which relative amount of elements A and B varies with the depth so as to result in a change in conductivity from p-type to n-type. The p-type layer (PC) and the n-type layer (NC) have respective crystal lattices that mutually are substantially coherent so as to form substantially a p-n homojunction.
In another aspect, a method for manufacturing a solar cell as defined in claim 1-8 is provided. Advantageously, a single deposition process can be used to form the chalcogenide layer comprising parts with different types of conductivity. This allows an efficient manufacturing process in which the solar cell can be formed in a single deposition tool.

摘要翻译： 提出了包含四元硫属化物化合物之间的同质性的薄膜太阳能电池。 通过使用硫族化物层，例如在硫族化物层中随着深度d变化的量的A和B的Cu 2 AX（d）BY（d）Z 4化合物的硫属化物层，获得足够的自由以实现从n 型到硫族化物层中的p型导电性，而不改变晶格结构并且具有最小的晶格常数变化。 这允许获得具有良好的能量转换效率的太阳能电池。 描述两个太阳能电池实施例。 在第一实施例中，通过沉积Cu 2 AX（d）BY（d）Z 4四元硫属化物层来实现销配置，其中元素A和B的相对量随着深度而变化，从而导致变化 从p型到n型的导电性，包括具有固有导电性的层的一部分。 n型接触层（NC），光伏层（PV）。 并且p型接触层（PC）具有相互基本一致的相应晶格，以形成均匀的连接。 在第二实施例中，通过沉积Cu 2 AX（d）BY（d）Z 4四元硫族化物的层来实现pn构型，其中元素A和B的相对量随深度而变化，从而导致 电导率从p型到n型。 p型层（PC）和n型层（NC）具有相互基本一致的相应的晶格，从而基本上形成p-n同型结。 另一方面，提供一种如权利要求1-8所述的太阳能电池的制造方法。 有利地，可以使用单个沉积工艺来形成包含不同导电类型的部件的硫族化物层。 这允许其中可以在单个沉积工具中形成太阳能电池的有效的制造过程。

公开(公告)号：EP2218108A2

公开(公告)日：2010-08-18

申请号：EP08847606.4

申请日：2008-11-06

申请人： Advanced Surface Technology B.V.

发明人： NANU, Marian ,  MEESTER, Bernard

IPC分类号： H01L31/032

CPC分类号： H01L31/032 ,  H01L31/0322 ,  Y02E10/541 ,  Y02P70/521

摘要： A thin-film solar cell comprising homojunctions between quaternary chalcogenide compounds is proposed. By using a chalcogenide layer of for example a Cu
2 A
X(d) B
Y(d) Z
4 compound, or more generally a Cu
c A
X(d) B
Y(d) Z
s compound, with amounts of A and B that vary with depth, d, in the chalcogenide layer, sufficient freedom is obtained to realize a transition from n-type to p-type conductivity in the chalcogenide layer without changing the lattice structure and with minimum change of lattice constant. This allows to obtain solar cells with good energy conversion efficiencies.

公开(公告)号：EP2166577A1

公开(公告)日：2010-03-24

申请号：EP08164942.8

申请日：2008-09-23

申请人： Advanced Surface Technology B.V.

发明人： Meester, Ben ,  Nanu, Marius

IPC分类号： H01L31/055 ,  H01L31/032 ,  H01L31/075

CPC分类号： H01L31/055 ,  H01L31/032 ,  H01L31/0323 ,  Y02E10/52 ,  Y02E10/541 ,  Y02P70/521

摘要： A solar cell is provided with a down-converter that converts incoming high energy photons into two or lower energy photons before conversion to electric current, in order to provide for more efficient conversion. The down-converter comprises a combination of Neodymium and Ytterbium ions in a sulfide. The sulfide may ne Indium Sulfide, doped with the Neodymium and Ytterbium. The indium sulfide may be combined with a CIS (Copper Indium Sulfide layer to form active layers of a solar cell, or the sulfide with Neodymium and Ytterbium may be used as a separate filter before conversion to electric current. A solar cell may be provided with an up converter realized by means of quantum dots in an absorber matrix.

摘要翻译： 太阳能电池配备有下转换器，其在转换为电流之前将进入的高能光子转换成两个或更低能量的光子，以提供更有效的转换。 下变频器包含硫化物中的钕和镱离子的组合。 硫化物可能含有掺杂了钕和镱的铟硫化物。 硫化铟可以与CIS（铜铟硫化物层）结合以形成太阳能电池的活性层，或者可以在转换为电流之前将具有钕和镱的硫化物用作单独的过滤器。可以提供太阳能电池 上变频器通过吸收体矩阵中的量子点实现。

公开(公告)号：EP1675186A1

公开(公告)日：2006-06-28

申请号：EP04078478.7

申请日：2004-12-22

申请人： Advanced Surface Technology B.V.

发明人： Meester, Bernhard ,  Nanu, Marian

IPC分类号： H01L31/032 ,  H01L31/18

CPC分类号： H01L31/0749 ,  H01L31/18 ,  H01L31/1828 ,  Y02E10/541 ,  Y02E10/543 ,  Y02P70/521

摘要： The invention relates to a method for manufacturing a photovoltaic device comprising a layer comprising a transparent material, a layer comprising an n-type doped material and a layer comprising a p-type doped material. The second layer comprises an n-type doped material between the layer comprising a transparent material and the layer comprising a p-type doped material. The method is characterized by using spray deposition and/or electrostatic spray deposition (ESD) for applying at least two layers of the layers. (Electrostatic) spray deposition enables all layers to be deposited at atmospheric pressure in an ambient atmosphere. The requirement for vacuum based technologies can be dropped. Solar cells can be produced fully by the method of the present invention. Solar cells produced in accordance with the invention have comparable properties as solar cells from the prior art. The method according to the invention offers the possibility to produce the layers without a cooling down step.

摘要翻译： 本发明涉及一种用于制造光伏器件的方法，该光伏器件包括包含透明材料的层，包含n型掺杂材料的层和包含p型掺杂材料的层。 第二层包括在包含透明材料的层和包含p型掺杂材料的层之间的n型掺杂材料。 该方法的特征在于使用喷雾沉积和/或静电喷雾沉积（ESD）来施加至少两层的层。 （静电）喷雾沉积使所有层在大气压下在环境气氛中沉积。 对真空技术的要求可以降低。 可以通过本发明的方法完全制造太阳能电池。 根据本发明生产的太阳能电池具有与现有技术的太阳能电池相当的性能。 根据本发明的方法提供了在没有冷却步骤的情况下生产层的可能性。