CURRENT MEASUREMENT DEVICE
    1.
    发明公开

    公开(公告)号:EP4414718A1

    公开(公告)日:2024-08-14

    申请号:EP22877847.8

    申请日:2022-09-14

    IPC分类号: G01R19/00 G01R15/20

    摘要: A current measurement device, comprising three or more different positions, wherein each position has at least two magnetoresistances. The two magnetoresistances are two magnetoresistances which respectively have a first sensing direction and an opposite second sensing direction. Within a set range, the resistance value of the magnetoresistance has a linear relationship with a magnetic field at the position where the magnetoresistance is located. The sensing directions of all magnetoresistances at different positions are the same or opposite. A magnetic field to be measured has a component in the sensing direction of the magnetoresistance. At least at one position the component in the sensing direction of said magnetic field is different from components in the sensing direction of said magnetic fields at other positions. All the magnetoresistances are electrically connected to form a resistance network in which an output signal includes the signals of said magnetic fields, and does not include or includes an interference magnetic field signal that is less than a first preset intensity. The current measurement device eliminates the interference of an interference magnetic field with current measurement.

    SINGLE-CHIP REFERENCED FULL-BRIDGE MAGNETIC FIELD SENSOR

    公开(公告)号:EP2700968B1

    公开(公告)日:2018-12-05

    申请号:EP12773589.2

    申请日:2012-04-06

    CPC分类号: H01L43/02 G01R33/098

    摘要: The present invention discloses a single-chip referenced full-bridge magnetoresistive magnetic-field sensor. The single-chip sensor is a Wheatstone bridge arrangement of magnetoresistive sensing elements and reference elements. The sensing elements and reference elements are formed from either magnetic tunnel junctions or giant magnetoresistive materials. The sensitivity of the reference and sensor elements is controlled through one or a combination of magnetic bias, exchange bias, shielding, or shape anisotropy. Moreover, the bridge output is tuned by setting the ratio of the reference and sensor arm resistance values to a predetermined ratio that optimizes the bridge output for offset and symmetry. The single-chip referenced-bridge magnetic field sensor of the present invention exhibits excellent temperature stability, low offset voltage, and excellent voltage symmetry.