公开(公告)号：EP4243099A1

公开(公告)日：2023-09-13

申请号：EP20963100.1

申请日：2020-11-30

Applicant: Huawei Technologies Co., Ltd.

Inventor： QIN, Qing ,  ZHOU, Xue ,  LIU, Xi

IPC: H01L43/08 ,  H01L43/02

Abstract: Embodiments of this application provide a memory and an electronic device, and relate to the field of memory technologies, to increase a reversal speed of a free layer. The memory includes a plurality of memory cells and bit lines that are disposed in a storage region of the memory and that are distributed in an array. The memory cell includes a transistor and a magnetic tunnel junction MTJ element connected to the transistor. The MTJ element is disposed on a current transmission path between a source or a drain of the transistor and the bit line. The MTJ element includes a pinning layer, a reference layer, a tunneling layer, and a free layer that are sequentially stacked. A magnetization direction of the pinning layer is parallel to a stacking direction of layers in the MTJ. The memory further includes a first magnetic structure disposed on the current transmission path. A direction of a magnetic field generated by the first magnetic structure at the free layer is not parallel to a magnetization direction of the free layer.

公开(公告)号：EP3790064B1

公开(公告)日：2023-03-15

申请号：EP20174589.0

申请日：2020-05-14

Inventor： WANG, Hui-Lin ,  HSU, Po-Kai ,  WENG, Chen-Yi ,  JHANG, Jing-Yin ,  WANG, Yu-Ping ,  CHEN, Hung-Yueh

IPC: H01L43/12 ,  H01L43/08 ,  H01L43/02 ,  H01L27/22 ,  G11C11/16

公开(公告)号：EP4100952A1

公开(公告)日：2022-12-14

申请号：EP21708472.2

申请日：2021-02-02

Applicant: Everspin Technologies, Inc.

Inventor： IKEGAWA, Sumio ,  ALMASI, Hamid ,  SHIMON ,  NAGEL, Kerry ,  LEE, Han, Kyu

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

公开(公告)号：EP3900066A1

公开(公告)日：2021-10-27

申请号：EP19899824.7

申请日：2019-11-19

Applicant: Wisconsin Alumni Research Foundation

Inventor： EOM, Chang-Beom ,  NAN, Tianxiang

IPC: H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

公开(公告)号：EP3073512B1

公开(公告)日：2021-06-16

申请号：EP14862121.2

申请日：2014-10-21

Inventor： KAJIHARA, Yuji

IPC: H01L21/02 ,  C23C14/58 ,  H01L21/3065 ,  H01L21/687 ,  H01L21/683 ,  H01L21/67 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H05B1/02 ,  F25B9/14

公开(公告)号：EP3511993B1

公开(公告)日：2021-01-06

申请号：EP17898351.6

申请日：2017-11-08

Inventor： TANG, Zhenyao ,  SASAKI, Tomoyuki

IPC: H01L43/08 ,  H01L43/02

公开(公告)号：EP3583633A1

公开(公告)日：2019-12-25

申请号：EP18761708.9

申请日：2018-01-22

Applicant: Spin Memory, Inc.

Inventor： PINARBASI, Mustafa Michael ,  KARDASZ, Bartlomiej Adam

IPC: H01L43/02 ,  H01L43/08 ,  H01L43/10

公开(公告)号：EP3563434A1

公开(公告)日：2019-11-06

申请号：EP16925295.4

申请日：2016-12-30

Applicant: INTEL Corporation

Inventor： RAHMAN, MD Tofizur ,  WIEGAND, Christopher J. ,  OGUZ, Kaan ,  BROCKMAN, Justin S. ,  OUELLETTE, Daniel G. ,  MAERTZ, Brian ,  O'BRIEN, Kevin P. ,  DOCZY, Mark L. ,  DOYLE, Brian S. ,  GOLONZKA, Oleg ,  GHANI, Tahir

IPC: H01L43/10 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

公开(公告)号：EP3563432A1

公开(公告)日：2019-11-06

申请号：EP16925528.8

申请日：2016-12-28

Applicant: INTEL Corporation

Inventor： BROCKMAN, Justin ,  WIEGAND, Christopher ,  RAHMAN, MD Tofizur ,  OUELETTE, Daniel ,  SMITH, Angeline ,  ALZATE VINASCO, Juan ,  KUO, Charles ,  DOCZY, Mark ,  OGUZ, Kaan ,  O'BRIEN, Kevin ,  DOYLE, Brian ,  GOLONZKA, Oleg ,  GHANI, Tahir

IPC: H01L43/02 ,  H01L43/08 ,  H01L43/10

公开(公告)号：EP3440719A1

公开(公告)日：2019-02-13

申请号：EP16897274.3

申请日：2016-03-28

Applicant: INTEL Corporation

Inventor： WIEGAND, Christopher J. ,  GOLONZKA, Oleg ,  RAHMAN, MD Tofizur ,  DOYLE, Brian S. ,  DOCZY, Mark L. ,  O'BRIEN, Kevin P. ,  OGUZ, Kaan ,  GHANI, Tahir ,  SURI, Satyarth

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12