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公开(公告)号：EP1227174B1
公开(公告)日：2013-03-13
申请号：EP01310703.2
申请日：2001-12-20
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2.发明公开
公开(公告)号：EP1227174A2
公开(公告)日：2002-07-31
申请号：EP01310703.2
申请日：2001-12-20
IPC分类号： C25D11/24
摘要： A process for selectively etching a surface of an anodized aluminum article. A preferred process includes: providing an aluminum sheet or web (100) including first (102) and second (101) sides having anodized finishes; etching the first side (102) to improve the adhesion capabilities of that side but not etching the second side (101) so that the second side (101) retains its anodized finish. The anodized aluminum may be colored before etching, thus the second side retains its color after etching. In a more preferred embodiment, sodium hydroxide or phosphoric acid is used to etch the anodized aluminum. Optionally, the etching of the second side (101) is prevented by administering gas or liquid over the second side (101), masking the second side (101) with a protective film, or shielding the second side with a shield. Further, the gas or liquid administered over the second side (101) may be controlled to increase or decrease the rate of etching on the first side (102).
摘要翻译： 用于选择性地蚀刻阳极氧化铝制品的表面的方法。 优选的方法包括：提供包括具有阳极氧化处理的第一（102）和第二（101）侧的铝片或网（100） 蚀刻第一侧（102）以改善该侧的粘合能力，但不蚀刻第二侧（101），使得第二侧（101）保持其阳极氧化处理。 阳极氧化的铝可以在蚀刻之前着色，因此第二面在蚀刻后保持其颜色。 在更优选的实施方案中，使用氢氧化钠或磷酸来蚀刻阳极氧化的铝。 任选地，通过在第二侧（101）上施用气体或液体，用保护膜掩蔽第二侧（101）或用屏蔽来屏蔽第二面来防止第二侧（101）的蚀刻。 此外，可以控制在第二侧（101）上施用的气体或液体以增加或减少第一侧（102）上的蚀刻速率。
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公开(公告)号：EP1227174A3
公开(公告)日：2005-01-19
申请号：EP01310703.2
申请日：2001-12-20
摘要： A process for selectively etching a surface of an anodized aluminum article. A preferred process includes: providing an aluminum sheet or web (100) including first (102) and second (101) sides having anodized finishes; etching the first side (102) to improve the adhesion capabilities of that side but not etching the second side (101) so that the second side (101) retains its anodized finish. The anodized aluminum may be colored before etching, thus the second side retains its color after etching. In a more preferred embodiment, sodium hydroxide or phosphoric acid is used to etch the anodized aluminum. Optionally, the etching of the second side (101) is prevented by administering gas or liquid over the second side (101), masking the second side (101) with a protective film, or shielding the second side with a shield. Further, the gas or liquid administered over the second side (101) may be controlled to increase or decrease the rate of etching on the first side (102).
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