NEUTRON DETECTOR USING PROPORTIONAL COUNTERS
    1.
    发明公开
    NEUTRON DETECTOR USING PROPORTIONAL COUNTERS 审中-公开
    Z。。。。。。。。。。。。。

    公开(公告)号:EP3123206A1

    公开(公告)日:2017-02-01

    申请号:EP15768082.8

    申请日:2015-03-27

    申请人: Lnd, Incorporated

    IPC分类号: G01T3/08

    CPC分类号: G01T3/008 G01T3/08

    摘要: A neutron detector module comprising a distribution of proportional counters positioned in a defined array. Each of the proportional counters includes a supply of a neutron sensitive gas for reacting with neutrons, and this reaction generates ionizing reaction products. The proportional counters include a multitude of tubes, and each of the tubes has a diameter between 0.50 inch and 1.00 inch. The neutron detector module comprises further a multitude of electrical conductors; and each of the conductors is positioned in one of the proportional counters, and the ionizing reaction products generate electric current pulses in the electrical conductors.

    摘要翻译: 中子检测器模块,其包括定位在定义的阵列中的比例计数器的分布。 每个比例计数器包括用于与中子反应的中子敏感气体的供应,并且该反应产生电离反应产物。 比例计数器包括多个管,并且每个管的直径在0.50英寸和1.00英寸之间。 中子检测器模块还包括多个电导体; 并且每个导体位于一个比例计数器中,并且电离反应产物在电导体中产生电流脉冲。

    LIQUID-SEMICONDUCTOR NEUTRON DETECTOR
    2.
    发明公开
    LIQUID-SEMICONDUCTOR NEUTRON DETECTOR 审中-公开
    中立公司FÜRFLÜSSIGEHALBLEITER

    公开(公告)号:EP2921883A1

    公开(公告)日:2015-09-23

    申请号:EP13855174.2

    申请日:2013-11-11

    IPC分类号: G01T3/08

    摘要: The invention relates to a liquid-semiconductor neutron detector characterised in that it comprises a hybrid structure consisting of a solid phase and a liquid phase, where the solid phase comprises a substrate of a semiconductor material characterised in that it has a series of grooves along the surface of one of the faces thereof forming an electrode of the detector, and where the liquid phase is contained in said grooves and characterised in that it comprises at least one neutron converter compound containing at least one isotope that is able to capture neutrons and replace them with charged particles suitable for ionising the semiconductor material. The invention also relates to the method for producing said detector and to the use thereof.

    摘要翻译: 本发明涉及一种液体半导体中子探测器,其特征在于它包括由固相和液相组成的混合结构,其中固相包括半导体材料的衬底,其特征在于它具有一系列沿着 其表面之一形成检测器的电极,并且其中所述液相包含在所述槽中,其特征在于,其包含至少一种含有能够捕获中子并替换它们的至少一个同位素的中子转化器化合物 具有适于电离半导体材料的带电粒子。 本发明还涉及生产所述检测器的方法及其用途。

    Neutron detector and method for detecting neutrons
    3.
    发明公开
    Neutron detector and method for detecting neutrons 审中-公开
    Neutronendetektor und Verfahren zur Detektion von Neutronen

    公开(公告)号:EP2770342A1

    公开(公告)日:2014-08-27

    申请号:EP14155914.6

    申请日:2014-02-20

    申请人: Symetrica Limited

    IPC分类号: G01T3/06 G01V5/00

    摘要: An apparatus comprises a neutron detector. The neutron detector comprises a conversion layer comprising a mixture of a neutron absorbing material and a scintillation material; and a photodetector optically coupled to the conversion layer and arranged to detect photons generated as a result of neutron absorption events in the conversion layer; wherein the apparatus is adapted to be carried by a user and the conversion layer is positioned within the neutron detector such that when the apparatus is being carried by a user in normal use neutrons are absorbed in the conversion layer after passing through the user such that the user's body provides a neutron moderating effect. In some cases the apparatus may be carried in association with a backpack or clothing worn by a user, for example, the neutron detector may be sized to fit in a pocket. In other cases the apparatus may be a hand-held device with the conversion layer arranged within a handle of the device to be gripped by a user when being carried.

    摘要翻译: 一种装置包括中子检测器。 中子检测器包括包含中子吸收材料和闪烁材料的混合物的转化层; 以及光电检测器,其光耦合到所述转换层并且被布置成检测由于所述转换层中的中子吸收事件而产生的光子; 其中所述装置适于由用户携带并且所述转换层位于所述中子检测器内,使得当所述装置在正常使用中由用户承载时,中子在通过所述用户之后被所述转换层吸收,使得 用户身体提供中子调节作用。 在一些情况下,装置可以与用户佩戴的背包或衣服相关联地携带,例如,中子探测器可以被设计成适合于口袋。 在其他情况下,装置可以是手持装置,其中转换层布置在装置的手柄中,以在被携带时由使用者抓握。

    SEMICONDUCTOR SUBSTRATE INCORPORATING A NEUTRON CONVERSION LAYER
    6.
    发明授权
    SEMICONDUCTOR SUBSTRATE INCORPORATING A NEUTRON CONVERSION LAYER 有权
    一种中子转换层的半导体衬底

    公开(公告)号:EP1678765B1

    公开(公告)日:2007-12-19

    申请号:EP04821491.0

    申请日:2004-09-28

    摘要: A semiconductor substrate incorporating a neutron conversion layer that is sensitive enough to permit the counting of single neutron events. The substrate includes an active semiconductor device layer, a base substrate, an insulating layer provided between the active semiconductor device layer and the base substrate, and a neutron conversion layer provided between the active semiconductor device layer and the base substrate. The neutron conversion layer is located within the insulating layer, between the insulating layer and the base substrate or between the active semiconductiv e device layer and the insulating layer. A barrier layer is provided between at least one of the neutron conversion layer and the active semiconductor device layer and the neutron conversion layer and the base substrate to prevent diffusion of the neutron conversion material provided in the neutron conversion layer. Further, a plurality of trenches may be formed in the active semiconductor device layer.

    SEMICONDUCTOR SUBSTRATE INCORPORATING A NEUTRON CONVERSION LAYER
    8.
    发明公开
    SEMICONDUCTOR SUBSTRATE INCORPORATING A NEUTRON CONVERSION LAYER 有权
    HALBLEITERSUBSTRAT MIT EINER NEUTRONENKONVERTIERUNGSSCHICHT

    公开(公告)号:EP1678765A4

    公开(公告)日:2006-10-18

    申请号:EP04821491

    申请日:2004-09-28

    申请人: US GOV SEC NAVY

    发明人: HUGHES HAROLD L

    摘要: A semiconductor substrate incorporating a neutron conversion layer that is sensitive enough to permit the counting of single neutron events. The substrate includes an active semiconductor device layer, a base substrate, an insulating layer provided between the active semiconductor device layer and the base substrate, and a neutron conversion layer provided between the active semiconductor device layer and the base substrate. The neutron conversion layer is located within the insulating layer, between the insulating layer and the base substrate or between the active semiconductiv e device layer and the insulating layer. A barrier layer is provided between at least one of the neutron conversion layer and the active semiconductor device layer and the neutron conversion layer and the base substrate to prevent diffusion of the neutron conversion material provided in the neutron conversion layer. Further, a plurality of trenches may be formed in the active semiconductor device layer.

    摘要翻译: 结合中子转换层的半导体衬底,其足够灵敏以允许对单个中子事件进行计数。 基板包括有源半导体器件层,基础基板,设置在有源半导体器件层和基础基板之间的绝缘层以及设置在有源半导体器件层和基础基板之间的中子转换层。 中子转换层位于绝缘层内,绝缘层与基础衬底之间或者有源半导体器件层与绝缘层之间。 在中子转换层和有源半导体器件层以及中子转换层和基础衬底中的至少一个之间提供阻挡层,以防止设置在中子转换层中的中子转换材料的扩散。 此外,可以在有源半导体器件层中形成多个沟槽。

    A pixel detector for incident particles and/or photons having improved testing capabilities and a method for testing a pixel detector
    9.
    发明公开
    A pixel detector for incident particles and/or photons having improved testing capabilities and a method for testing a pixel detector 有权
    对颗粒和/或光子带用于测试像素检测器提高测试能力和方法像素检测器

    公开(公告)号:EP1538460A1

    公开(公告)日:2005-06-08

    申请号:EP04026776.7

    申请日:2004-11-11

    IPC分类号: G01T1/24 G01T1/17

    CPC分类号: G01T1/2928 G01T3/08

    摘要: A pixel detector having enhanced capabilities for failure detection of a distinct pixel and a method for testing a pixel detector. The pixel detector comprises a conversion layer (4), an NxM array of detector diodes (2), an electronic circuitry layer (16) and a plurality of circuit traces. Each circuit trace comprises a cell testing trace (28) disposed at least partially relative to the detector diodes (2) in order to allow a test signal on a distinct cell testing trace (28) to crosstalk into the respective detector diode.

    摘要翻译: 的像素检测器具有增强的对故障检测的独特像素和用于测试像素检测器的方法的能力。 像素检测器包括检测器二极管(2)的电子电路层(16)和电路迹线的多个N×M个阵列上的转换层(4)。 每个电路迹线,以允许在不同的细胞测试迹(28)的测试信号串扰进入respectivement检测器二极管包括至少部分布置在相对于所述检测器二极管(2)的细胞的测试迹(28)。