摘要:
A neutron detector module comprising a distribution of proportional counters positioned in a defined array. Each of the proportional counters includes a supply of a neutron sensitive gas for reacting with neutrons, and this reaction generates ionizing reaction products. The proportional counters include a multitude of tubes, and each of the tubes has a diameter between 0.50 inch and 1.00 inch. The neutron detector module comprises further a multitude of electrical conductors; and each of the conductors is positioned in one of the proportional counters, and the ionizing reaction products generate electric current pulses in the electrical conductors.
摘要:
The invention relates to a liquid-semiconductor neutron detector characterised in that it comprises a hybrid structure consisting of a solid phase and a liquid phase, where the solid phase comprises a substrate of a semiconductor material characterised in that it has a series of grooves along the surface of one of the faces thereof forming an electrode of the detector, and where the liquid phase is contained in said grooves and characterised in that it comprises at least one neutron converter compound containing at least one isotope that is able to capture neutrons and replace them with charged particles suitable for ionising the semiconductor material. The invention also relates to the method for producing said detector and to the use thereof.
摘要:
An apparatus comprises a neutron detector. The neutron detector comprises a conversion layer comprising a mixture of a neutron absorbing material and a scintillation material; and a photodetector optically coupled to the conversion layer and arranged to detect photons generated as a result of neutron absorption events in the conversion layer; wherein the apparatus is adapted to be carried by a user and the conversion layer is positioned within the neutron detector such that when the apparatus is being carried by a user in normal use neutrons are absorbed in the conversion layer after passing through the user such that the user's body provides a neutron moderating effect. In some cases the apparatus may be carried in association with a backpack or clothing worn by a user, for example, the neutron detector may be sized to fit in a pocket. In other cases the apparatus may be a hand-held device with the conversion layer arranged within a handle of the device to be gripped by a user when being carried.
摘要:
A method includes detecting a neutron (in 102) based on a time proximity of a first signal and a second signal. The first signal indicates detection of at least one of a neutron and a gamma ray. The second signal indicates detection of a gamma ray (in 104).
摘要:
A semiconductor substrate incorporating a neutron conversion layer that is sensitive enough to permit the counting of single neutron events. The substrate includes an active semiconductor device layer, a base substrate, an insulating layer provided between the active semiconductor device layer and the base substrate, and a neutron conversion layer provided between the active semiconductor device layer and the base substrate. The neutron conversion layer is located within the insulating layer, between the insulating layer and the base substrate or between the active semiconductiv e device layer and the insulating layer. A barrier layer is provided between at least one of the neutron conversion layer and the active semiconductor device layer and the neutron conversion layer and the base substrate to prevent diffusion of the neutron conversion material provided in the neutron conversion layer. Further, a plurality of trenches may be formed in the active semiconductor device layer.
摘要:
According to one embodiment an apparatus is disclosed. The computer apparatus includes a first integrated circuit (IC) and a second IC. The second IC (150) includes a soft error rate (SER) immune component (240-275) and a SER component (210, 220, 230) to detect radiation that could result in soft errors at logic at the first IC.
摘要:
A semiconductor substrate incorporating a neutron conversion layer that is sensitive enough to permit the counting of single neutron events. The substrate includes an active semiconductor device layer, a base substrate, an insulating layer provided between the active semiconductor device layer and the base substrate, and a neutron conversion layer provided between the active semiconductor device layer and the base substrate. The neutron conversion layer is located within the insulating layer, between the insulating layer and the base substrate or between the active semiconductiv e device layer and the insulating layer. A barrier layer is provided between at least one of the neutron conversion layer and the active semiconductor device layer and the neutron conversion layer and the base substrate to prevent diffusion of the neutron conversion material provided in the neutron conversion layer. Further, a plurality of trenches may be formed in the active semiconductor device layer.
摘要:
A pixel detector having enhanced capabilities for failure detection of a distinct pixel and a method for testing a pixel detector. The pixel detector comprises a conversion layer (4), an NxM array of detector diodes (2), an electronic circuitry layer (16) and a plurality of circuit traces. Each circuit trace comprises a cell testing trace (28) disposed at least partially relative to the detector diodes (2) in order to allow a test signal on a distinct cell testing trace (28) to crosstalk into the respective detector diode.
摘要:
A radiation detector comprises a boron-doped diamond substrate ( 10 ) having an overlayer ( 12 ) of diamond epitaxially grown on surface ( 14 ) of the substrate ( 10 ). The top surface ( 16 ) of the layer ( 12 ) is provided with an interdigitated electrode array ( 18 ) in electrical contact therewith.