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公开(公告)号：EP0206424A3
公开(公告)日：1988-02-03
申请号：EP86201084
申请日：1986-06-23
IPC分类号： H03F03/217 , H03F03/24
CPC分类号： H03F3/2176
摘要： 0 An r.f. power amplifier, typically a high efficiency, class E amplifier in which a reactive load circuit (18) is connected to a semiconductor switching device (10), the load circuit being designed to have the required input load angle and loaded Q so that the voltage across the device (10) goes to zero with zero slope before it switches on and passes current, is provided with a step recovery diode (32) connected to the device (10) to limit the voltage swing across the device (10) with no significant loss of efficiency. This allows the voltage-handling capability required of the device to be reduced or the amplifier output power to be increased by increasing the supply voltage.
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公开(公告)号：EP0188329A3
公开(公告)日：1988-01-27
申请号：EP86300099
申请日：1986-01-08
申请人： NEC CORPORATION
发明人： Kobayashi, Naoki c/o NEC Corporation , Asakura, Takashi c/o NEC Corporation , Sato, Hideo c/o NEC Corporation
IPC分类号： H03F03/24 , H03F03/217 , H03F01/06
CPC分类号： H03F3/24
摘要： A class D transmitter arrangement comprises a pulse width modulator (1) providing complimentary outputs B, C to a push-pull modulation amplifier (2) whose output is smooth by a low pass filter (3). The voltage of the filtered signal is stepped up by a transformer (4) to provide a component of the supply voltage for a power amplifier (5) amplifying the transmitter carrier signal. The maximum output from the transformer (4) have a peak-to-peak voltage of twice the voltage of a power supply (9) supplying both the modulation pmplifier (2) and a fixed component of the supply for the amplifier (5), through a choke (8). The power supply voltage need only be half that required in known arrangements.
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