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12 条记录 (耗时 0.013 秒)

    DISPLAY PANEL AND MANUFACTURING METHOD OF THE SAME
    1.
    发明公开
    DISPLAY PANEL AND MANUFACTURING METHOD OF THE SAME 审中-实审

    公开(公告)号：EP4387419A3

    公开(公告)日：2024-07-03

    申请号：EP23214618.3

    申请日：2023-12-06

    申请人： Samsung Display Co., Ltd.

    发明人： KIM, Youngrok ,  PARK, Kyu-Soon ,  CHOUNG, Jong-Hyun

    IPC分类号： H10K59/12 ,  H10K59/122 ,  H10K59/80 ,  H10K59/35 ,  H10K71/20

    CPC分类号： H10K59/1201 ,  H10K59/122 ,  H10K59/80522 ,  H10K59/88 ,  H10K59/873 ,  H10K59/35 ,  H10K71/231

    摘要： A display panel includes a pixel defining layer including first and second light-emitting openings, a conductive partition disposed on the pixel defining layer and including first and second partition openings and respectively corresponding to the first and second light-emitting openings, a first light-emitting element disposed in the first partition opening, a second light-emitting element disposed in the second partition opening, and a conductive pattern disposed on the conductive partition. The first light-emitting element includes a first anode, a first organic layer, and a first cathode contacting the conductive partition, and the second light-emitting element includes a second anode, a second organic layer, and a second cathode contacting the conductive partition. A conductive pattern opening corresponding to the second light-emitting opening is included in the conductive pattern.

    DISPLAY DEVICE, METHOD OF MANUFACTURING DISPLAY DEVICE, AND ELECTRONIC DEVICE
    3.
    发明公开
    DISPLAY DEVICE, METHOD OF MANUFACTURING DISPLAY DEVICE, AND ELECTRONIC DEVICE 审中-公开

    公开(公告)号：EP4436335A1

    公开(公告)日：2024-09-25

    申请号：EP24159205.4

    申请日：2024-02-22

    申请人： Samsung Display Co., Ltd.

    发明人： MOON, Youngmin ,  KIM, Arong ,  PARK, Heemin

    IPC分类号： H10K50/19 ,  H10K59/12 ,  H10K71/20

    CPC分类号： H10K50/19 ,  H10K59/122 ,  H10K59/1201 ,  H10K59/8794 ,  H10K71/231 ,  H10K71/20

    摘要： A display device includes a first pixel electrode and a second pixel electrode that are spaced from each other on a substrate, a pixel-defining layer including a first opening and a second opening, a first lower emission layer on the first pixel electrode, a second lower emission layer on the second pixel electrode, a first charge generation layer interposed between the first lower emission layer and a first upper emission layer, a second charge generation layer interposed between the second lower emission layer and a second upper emission layer, an opposite electrode on the first pixel electrode and the second pixel electrode, a heating metal layer on the pixel-defining layer and arranged between the first opening and second opening when seen from a direction perpendicular to the substrate, and an inorganic insulating layer covering the heating metal layer.

    PEROVSKITE PATTERNED FILM AND PREPARATION METHOD AND APPLICATION THEREOF
    7.
    发明公开
    PEROVSKITE PATTERNED FILM AND PREPARATION METHOD AND APPLICATION THEREOF 审中-实审

    公开(公告)号：EP4395498A1

    公开(公告)日：2024-07-03

    申请号：EP23215645.5

    申请日：2023-12-11

    申请人： Leyard Optoelectronic Co., Ltd.

    发明人： YANG, Xiaoyu ,  MA, Li ,  LU, Changjun

    IPC分类号： H10K50/115 ,  H10K71/20 ,  H10K85/50

    CPC分类号： Y02E10/549 ,  H10K85/50 ,  H10K71/211 ,  H10K50/115

    摘要： The disclosure provides a perovskite patterned film and a preparation method and application thereof. The preparation method comprises the following steps: coating a PbX2 precursor on a substrate, and annealing to obtain a PbX2 film substrate; coating AY salt on the nano stamp with the pattern, and annealing to obtain an AY film nano stamp; carrying out nanoimprinting to obtain an APb(X,Y)s perovskite patterned film. According to the method, the perovskite pattern is accurately constructed on the PbX2 substrate in a mode of combining contact imprinting and ion diffusion, the PbX2/perovskite/PbX2 coplanar surface smooth thin film is obtained, the perovskite pattern serves as an active area, the rest PbX2 naturally serves as a wide-band-gap insulation/inert isolation material, the residual rate of the thin film is low, and the yield is greatly improved.