METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
    2.
    发明授权

    公开(公告)号:EP2693464B1

    公开(公告)日:2018-12-26

    申请号:EP12764834.3

    申请日:2012-02-23

    申请人: Sony Corporation

    摘要: Provided is a method of producing an organic transistor, including collectively forming a gate insulating film and an organic semiconductor film by applying, onto a gate electrode, a solution including a polymer and at least one of compounds represented by General Formulas 1 to 4 and 5 to 7, a compound having a structure represented by General Formula 4, a compound having a structure represented by General Formula 5 or 6, and forming a source electrode and a drain electrode on the organic semiconductor film. (where R is a linear or branched alkyl group) (where R is an alkyl group) (where R is an alkyl group) (where A1 and A2 are represented by Formula 8) (where R is an alkyl group or another substituent)