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    Non volatile logic devices using magnetic tunnel junctions
    2.
    发明授权
    Non volatile logic devices using magnetic tunnel junctions 有权

    公开(公告)号：EP2330594B1

    公开(公告)日：2018-07-11

    申请号：EP10290278.0

    申请日：2010-05-26

    申请人： Crocus Technology S.A.

    发明人： Berger, Neal ,  El Baraji, Mourad

    IPC分类号： G11C14/00 ,  G11C19/08 ,  G11C11/16 ,  G11C8/04 ,  G11C19/02

    CPC分类号： G11C19/08 ,  G11C8/04 ,  G11C11/1675 ,  G11C14/0081 ,  G11C19/02

    摘要： The present disclosures concerns a register cell (1) comprising a differential amplifying portion (2) containing a first inverter (3) coupled to a second inverter (3') such as to form an unbalanced flip-flop circuit; a first and second bit line (BL0, BL1) connected to one end of the first and second inverter (3, 3'), respectively; and a first and second source line (SL0, SL1) connected to the other end of the first and second inverter (3, 3'), respectively; characterized by the register cell (1) further comprising a first and second magnetic tunnel junction (6, 6') electrically connected to the other end of the first and second inverter (3, 3'), respectively. The shift register disclosed herein can be made smaller than conventional shift registers and power consumption during the write and read operation of the shift registers can be low. The shift register disclosed herein can be made smaller than conventional shift registers and power consumption during the write and read operation of the shift registers can be low.

    METHOD OF PROPAGATING MAGNETIC DOMAIN WALL IN MAGNETIC DEVICES
    4.
    发明公开
    METHOD OF PROPAGATING MAGNETIC DOMAIN WALL IN MAGNETIC DEVICES 审中-公开

    公开(公告)号：EP3637420A1

    公开(公告)日：2020-04-15

    申请号：EP19202117.8

    申请日：2019-10-08

    申请人： Imec VZW ,  Katholieke Universiteit Leuven KU Leuven Research & Development

    发明人： Vaysset, Mr. Adrien ,  Odysseas, Mr. Zografos

    IPC分类号： G11C11/14 ,  G11C11/16 ,  G11C19/02 ,  G11C19/08

    摘要： The invention generally relates to magnetic devices, and more particularly to magnetic devices configured to generate a stream of domain walls propagating along an output magnetic bus. In an aspect, a magnetic device includes a magnetic propagation layer, which in turn includes a plurality of magnetic buses. The magnetic buses include at least a first magnetic bus, a second magnetic bus, and an output magnetic bus configured to guide propagating magnetic domain walls. The magnetic propagation layer further comprises a central region in which the magnetic buses converge and are joined together. In another aspect, a method includes providing the magnetic device and generating the stream of domain walls propagating along the output magnetic bus.

    Data storage device using magnetic domain wall movement and method of operating the data storage device
    5.
    发明公开
    Data storage device using magnetic domain wall movement and method of operating the data storage device 有权
    数据存储装置使用磁畴壁运动和操作数据存储装置的方法

    公开(公告)号：EP2299451A1

    公开(公告)日：2011-03-23

    申请号：EP10191735.9

    申请日：2007-12-20

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Kim, Yong-su

    IPC分类号： G11C19/08 ,  G11C19/02 ,  G11C11/14

    CPC分类号： G11C11/14 ,  G11C19/0808 ,  G11C19/0841

    摘要： Provided are a data storage device using magnetic domain wall movement and a method of operating the same. The data storage device includes a magnetic layer having a plurality of magnetic domains, a write head provided at an end portion of the magnetic layer, a read head to read data written to the magnetic layer, and a current controller connected to the write head and the read head. The method of operating the data storage device includes reading data of an end portion of the magnetic layer using a read head provided at the end portion of the magnetic layer in which a write head is provided at the other end portion thereof, moving a magnetic domain wall of the magnetic layer by a distance corresponding to the length of one magnetic domain toward the end portion, and writing the read data to the other end portion of the magnetic layer using the write head and a current controller provided between the write head and the read head.

    摘要翻译： 提供了一种使用磁畴壁移动的数据存储装置及其操作方法。 数据存储装置包括具有多个磁畴的磁性层，设置在磁性层的端部的写入头，读取写入到磁性层的数据的读取头和连接到写入头的电流控制器，以及 读头。 操作数据存储装置的方法包括使用设置在其中在其另一端部设置有写入头的磁性层的端部处的读取头来读取磁性层的端部的数据， 并且使用写入头和设置在写入头和写入头之间的电流控制器将读取的数据写入到磁性层的另一端部分 读头。

    Data storage device using magnetic domain wall movement and method of operating the data storage device
    6.
    发明公开
    Data storage device using magnetic domain wall movement and method of operating the data storage device 有权
    具有用于数据存储设备的操作的磁畴壁移动和方法的数据存储装置

    公开(公告)号：EP2073213A1

    公开(公告)日：2009-06-24

    申请号：EP07150252.0

    申请日：2007-12-20

    申请人： Samsung Electronics Co., Ltd.

    发明人： Kim, Yong-su

    IPC分类号： G11C19/08 ,  G11C19/02 ,  G11C11/14

    CPC分类号： G11C11/14 ,  G11C19/0808 ,  G11C19/0841

    摘要： Provided are a data storage device using magnetic domain wall movement and a method of operating the same. The data storage device includes a magnetic layer having a plurality of magnetic domains, a write head provided at an end portion of the magnetic layer, a read head to read data written to the magnetic layer, and a current controller connected to the write head and the read head. The method of operating the data storage device includes reading data of an end portion of the magnetic layer using a read head provided at the end portion of the magnetic layer in which a write head is provided at the other end portion thereof, moving a magnetic domain wall of the magnetic layer by a distance corresponding to the length of one magnetic domain toward the end portion, and writing the read data to the other end portion of the magnetic layer using the write head and a current controller provided between the write head and the read head.

    摘要翻译： 提供了使用磁畴壁移动和操作相同的方法的数据存储装置。 该数据存储装置包括具有磁畴的多个磁性层，一个写头在磁性层，一个读头读取写入到磁性层的数据，并连接到写入头的电流控制器的端部设置在与 读头。 操作所述数据存储装置的方法包括：使用在其中写磁头在另一端部设置在其磁性层的端部设置的读出磁头的磁性层的端部的读取数据时，移动磁畴 的距离对应于一个磁畴的朝向端部的长度，并写入所读取的数据到磁性层的另一端部利用写头和写头与之间提供的电流控制器中的磁性层的壁 读数头。

    Non volatile logic devices using magnetic tunnel junctions
    8.
    发明公开
    Non volatile logic devices using magnetic tunnel junctions 有权
    Nichtflüchtigelogische Vorrichtungen mitMagnettunnelübergängen

    公开(公告)号：EP2330594A1

    公开(公告)日：2011-06-08

    申请号：EP10290278.0

    申请日：2010-05-26

    申请人： Crocus Technology S.A.

    发明人： Berger, Neal ,  El Baraji, Mourad

    IPC分类号： G11C8/04 ,  G11C11/56 ,  G11C19/02

    CPC分类号： G11C19/08 ,  G11C8/04 ,  G11C11/1675 ,  G11C14/0081 ,  G11C19/02

    摘要： The present disclosures concerns a register cell (1) comprising a differential amplifying portion (2) containing a first inverter (3) coupled to a second inverter (3') such as to form an unbalanced flip-flop circuit; a first and second bit line (BL0, BL1) connected to one end of the first and second inverter (3, 3'), respectively; and a first and second source line (SL0, SL1) connected to the other end of the first and second inverter (3, 3'), respectively; characterized by the register cell (1) further comprising a first and second magnetic tunnel junction (6, 6') electrically connected to the other end of the first and second inverter (3, 3'), respectively. The shift register disclosed herein can be made smaller than conventional shift registers and power consumption during the write and read operation of the shift registers can be low. The shift register disclosed herein can be made smaller than conventional shift registers and power consumption during the write and read operation of the shift registers can be low.

    摘要翻译： 本公开涉及一种寄存器单元（1），包括：差分放大部分（2），包含耦合到第二反相器（3'）的第一反相器（3），以形成不平衡触发器电路; 分别连接到第一和第二逆变器（3,3'）的一端的第一和第二位线（BL0，BL1） 以及分别连接到第一和第二逆变器（3,3'）的另一端的第一和第二源极线（SL0，SL1） 其特征在于寄存器单元（1）还包括分别电连接到第一和第二逆变器（3,3'）的另一端的第一和第二磁性隧道结（6,6'）。 这里公开的移位寄存器可以比传统的移位寄存器小，并且在移位寄存器的写入和读取操作期间的功耗可能很低。 这里公开的移位寄存器可以比传统的移位寄存器小，并且在移位寄存器的写入和读取操作期间的功耗可能很低。