摘要:
A vacuum vessel is configured by hermetically joining a faceplate (13) to one end of a side tube (15) and a stem (29) to the other end via a tubular member (31). A photocathode (14), a focusing electrode (17), dynodes (Dy1-Dy12), a drawing electrode (19), and anodes (25) are arranged within the vacuum vessel. The tubular member (31) is disposed on the periphery of the stem (29), and supporting pins (21) and lead pins (47) penetrate and are fixed to an extending section (32) that protrudes from the tubular member (31). The supporting pins (21) and the lead pins (47) are arranged in cutout portions (49, 24) of the dynodes (Dy1-Dy12) and the drawing electrode (19), thereby allowing effective areas of each electrode to be enlarged. Further, protuberant sections (33) are formed on the connecting sections of each pin with the stem (29), thereby facilitating thickness control of the stem.
摘要:
An inner surface of an electron-multiplier hole (14) includes a first curved surface (19a) and a second curved surface (19b) that face each other. The first curved surface (19a) extends from an edge of an input opening (14a) in such a way as to face the input opening (14a), and is shaped like a substantially circular arc having a predetermined radius. The second curved surface (19b) extends from an edge of an output opening (14b) in such a way as to face the output opening (14b), and is shaped like a substantially circular arc having a predetermined radius.
摘要:
An image intensifier (300) and electron multiplier (312) therefor is disclosed. Photons (308) of an image impinge a photo-cathode (306) that converts the photons to electrons. An electron multiplier multiplies the electrons from the photo-cathode to create an increased number of electrons. A sensor (304) captures the increased number of electrons to produce an intensified image. The electron multiplier is an electron bombarded device (EBD) containing a semiconductor structure (320). The semiconductor structure has an input surface (320a) for receiving electrons and an emission surface (320b) for passing an increased number of electrons. The semiconductor structure is doped to direct the flow of electrons through the semiconductor structure to an emission area on the emission surface.
摘要:
A photomultiplier cuts out light reflection from each focusing piece or unuseful electrons from being emitted from photoelectronic face by forming an oxide film over the surface of each focusing piece of a focusing electrode. The oxide film is formed over the surface of each secondary electron emission piece of the first and second stage die node to cut out the reflection from each secondary electron emission piece, so that unuseful electrons by reflected light are prevented from being emitted from the photoelectron face. Further, a light absorbing glass partition is provided in a light receiving face plate to suppress crosstalks between channels.
摘要:
Les dynodes (D i , D 2 ...) du photomultiplicateur comportent chacune deux plans espacés (D 11 et D 12 ), dont les lamelles élémentaires ont une section droite en forme de triangle isocèle, tournées symétriquement vers la fenêtre d'entrée du tube photomultiplicateur, Les lamees de deux plans consécutifs sont intercalées en chicane, et agencées de sorte que les électrons partant du premier plan traversent le second sans en frapper les lamelles. La distance Z 1 entre deux étages de dynodes, qui est grande par rapport à la distance Z o entre deux plans d'une même dynode, est choisie, en fonction du champ électrique, de sorte que les électrons secondaires provenant de l'étage amont frappent selon une distribution concentrée un nombre limité de lamelles de l'étage aval.