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    QUANTUM BIT ASSEMBLY, QUANTUM BIT ASSEMBLY PREPARATION METHOD, CHIP, AND DEVICE
    3.
    发明公开
    QUANTUM BIT ASSEMBLY, QUANTUM BIT ASSEMBLY PREPARATION METHOD, CHIP, AND DEVICE 审中-公开

    公开(公告)号：EP4191693A1

    公开(公告)日：2023-06-07

    申请号：EP21937220.8

    申请日：2021-12-06

    申请人： Tencent Technology (Shenzhen) Company Limited

    发明人： ZOU, Chenji ,  ZHENG, Yarui ,  WANG, Hui

    IPC分类号： H01L39/22

    摘要： This application provides a qubit assembly, a qubit assembly preparation method, a chip, and a device, and relates to the field of micro-nano processing technologies. The qubit assembly includes: a substrate (101), a superconducting circuit layer (102), an UBM layer (103), and a welding spot (104), the superconducting circuit layer (102) being arranged on the substrate (101); the UBM layer (103) being arranged on the superconducting circuit layer(102), and a superconducting connection being formed between the UBM layer (103) and the superconducting circuit layer (102); a material of the UBM layer (103) being a metal niobium; and the welding spot (104) being arranged on the UBM layer (103), and a superconducting connection being formed between the welding spot (104) and the UBM layer (103). The foregoing solution can improve performance of a flip-chip superconducting quantum chip.

    A METHOD FOR FABRICATING A MAGNETIC SPIN VALVE DEVICE COMPRISING FERROMAGNETIC LAYERS WITH NON-COLLINEAR MAGNETIZATIONS
    10.
    发明公开
    A METHOD FOR FABRICATING A MAGNETIC SPIN VALVE DEVICE COMPRISING FERROMAGNETIC LAYERS WITH NON-COLLINEAR MAGNETIZATIONS 审中-公开

    公开(公告)号：EP4033503A1

    公开(公告)日：2022-07-27

    申请号：EP21153254.4

    申请日：2021-01-25

    申请人： Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V.

    发明人： KHAYDUKOV, Yury ,  KELLER, Thomas ,  KEIMER, Bernhard ,  MORARI, Roman ,  SIDORENKO, Anatolie

    IPC分类号： H01F10/32 ,  H01F41/30 ,  H01L39/22

    摘要： A method (100) for fabricating a magnetic device comprises providing a layer stack (110), the layer stack comprising a substrate,
    a first ferromagnetic layer disposed above the substrate, the first ferromagnetic layer comprising a uniaxial magnetic anisotropy including an easy axis,
    a non-magnetic layer disposed on the first ferromagnetic layer,
    a second ferromagnetic layer disposed on the non-magnetic layer, the second ferromagnetic layer comprising a unidirectional anisotropy, and
    an antiferromagnetic layer disposed on the second ferromagnetic layer, the antiferromagnetic layer comprising a Neel temperature T N ;
    heating the layer stack above the Neel temperature T N of the antiferromagnetic layer (120);
    applying a magnetic field H CL to the layer stack, the magnetic field H CL comprising a magnetic field direction having an arbitrary angle with respect to the easy axis (130);
    cooling the layer stack below the Neel temperature T N of the antiferromagnetic layer with the magnetic field H CL applied; removing the magnetic field H CL .