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21.发明专利蓄電デバイス用組成物、蓄電デバイス用スラリー、蓄電デバイス電極およびその製造方法、保護膜およびその製造方法、ならびに蓄電デバイス 审中-公开的蓄电装置组成，用于淤浆存储装置电极及其制造方法的蓄电装置中，保护膜和其制造方法以及蓄电装置，
公开(公告)号：JPWO2014203767A1
公开(公告)日：2017-02-23
申请号：JP2015522780
申请日：2014-06-10
Applicant: Jsr株式会社
CPC classification number: H01M4/623 , H01G11/30 , H01G11/48 , H01M4/0402 , H01M4/131 , H01M4/1391 , H01M4/366 , H01M4/48 , Y02E60/13 , Y02T10/7022
Abstract: 密着性および充放電特性に優れた蓄電デバイス電極や保護膜を製造可能な蓄電デバイス用組成物および蓄電デバイス用スラリーを提供する。本発明に係る蓄電デバイス用組成物は、重合体(A1)と、重合体(A2)と、液状媒体(B)と、を含有する蓄電デバイスを作製するための組成物であって、前記重合体(A1)が、スルホ基、カルボキシ基、およびこれらの塩の基よりなる群から選択される少なくとも1種の官能基を、前記重合体(A1)100gあたり合計0.001〜1.2モル含有し、前記重合体(A1)が、下記一般式(1)で表される繰り返し単位を有し、前記重合体(A2)100質量部中、フッ素原子を有する単量体に由来する繰り返し単位の含有割合が80質量部以上であることを特徴とする。(式中、R1は水素原子またはメチル基を表し、R2は炭素数1〜16のアルキル基またはシクロアルキル基を表す。)
Abstract translation: 优异的储存设备电极和保护膜可以制造蓄电装置组合物的粘附性和充放电循环特性，并提供一种用于电存储设备的浆料。 根据本发明中，聚合物（A1），和聚合物（A2），用于制备液体培养基（B），含有重存储装置中的组合物的存储设备的组合物 聚合物（A1）为磺基，羧基，和至少一个官能团选自这些盐的基团组成的组中，所述聚合物（A1）的总0.001至1.2摩尔和每100g包含，其特征在于 聚合物（A1）具有下述通式（1）中，聚合物（A2）在100重量份，所述重复单元的含量从具有氟原子的单体衍生表示的重复单元 其特征在于它是80质量份以上。 （式中，R 1表示氢原子或甲基，R 2表示烷基或碳原子数1〜16的环烷基。）
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22.发明专利リチウムイオン二次電池用組成物、リチウムイオン二次電池用スラリー、リチウムイオン二次電池用電極、リチウムイオン二次電池用セパレーターおよびリチウムイオン二次電池 有权一种锂离子二次电池组合物，用于锂离子二次电池的浆料中，锂离子二次电池用电极，锂离子二次电池用隔膜及锂离子二次电池
公开(公告)号：JPWO2014188987A1
公开(公告)日：2017-02-23
申请号：JP2014541470
申请日：2014-05-19
Applicant: Jsr株式会社
IPC: H01M4/62 , C08K3/22 , C08K3/36 , C08K5/09 , C08K5/10 , C08K5/20 , C08L51/00 , C08L91/06 , H01M2/16 , H01M4/13
CPC classification number: H01M4/628 , H01G11/38 , H01G11/52 , H01M2/1653 , H01M2/166 , H01M2/1673 , H01M2/1686 , H01M4/13 , H01M4/622 , H01M4/623 , H01M10/0525 , H01M10/4235 , Y02E60/13
Abstract: ブロッキング耐性に優れると共に、電極とセパレーターとを積層させる際には位置ずれを効果的に防止できる(すなわち適度にブロッキングできる)電極やセパレーターを製造可能な蓄電デバイス用組成物を提供する。本発明に係る蓄電デバイス用組成物は、バインダーと、ブロッキング防止剤と、液状媒体と、を含有し、前記バインダーの含有量をM1質量部、前記ブロッキング防止剤の含有量をM2質量部としたときに、1
Abstract translation: 其具有优异的抗粘连性，当层叠电极和隔板提供的位置位移，可以防止有效（即合理的可能阻塞）电极和隔板要制造的电存储设备，用于该组合物。 根据本发明，粘合剂，和防粘连剂，液体介质，包含，以质量M1份和粘合剂的内容存储设备的组合物，防粘连剂的含量为M2质量份 偶尔，其特征在于：1
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公开(公告)号：JP5360357B2
公开(公告)日：2013-12-04
申请号：JP2008164123
申请日：2008-06-24
Applicant: Jsr株式会社
Abstract: PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing water-based dispersing composition capable of keeping in-plane uniformity of polishing speed and inhibiting variation in in-plane flatness of a polished surface during a process of chemical-mechanical-polishing a barrier metal layer provided on a substrate for use of a display device, a manufacturing method of the chemical mechanical polishing water-based dispersing composition, and a chemical mechanical polishing method using the dispersing composition. SOLUTION: The inventors have found that the problem can be solved by means of the chemical mechanical polishing water-based dispersing composition for polishing the barrier metal layer provided on the substrate for use of the display device, which contains (A) abrasive grains, (B) an organic acid and (C) one or more atoms selected from a group consisting of Ta, Ti and Ru, wherein a ratio Rmax/Rmin of a longer diameter Rmax and a shorter diameter of the (A) abrasive grain ranges from 1.0 to 1.5 and (C) element ranges from 1.0×10 2 to 1.0×10 4 ppm. COPYRIGHT: (C)2010,JPO&INPIT
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Patent Agency Ranking
公开(公告)号：JP4852744B2
公开(公告)日：2012-01-11
申请号：JP2005242473
申请日：2005-08-24
IPC: H01L27/105 , H01G4/12 , H01G4/33 , H01L21/8246
Abstract: PROBLEM TO BE SOLVED: To provide an electrode mechanism in a dielectric material film capacitor which assures close contact between a lower electrode and a layer under the lower electrode and is not easily oxidized and thermally stable. SOLUTION: The dielectric material film capacitor 20 comprises a lower electrode 22 in the thickness of 10 to 100 nm formed of a material including platinum, a dielectric material film 24 formed on the upper part of the lower electrode 22 and including an oxide having the type ABOx peroviskite structure, and an upper electrode 26 provided on the upper part of the dielectric material film 24. COPYRIGHT: (C)2007,JPO&INPIT
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25.发明专利
公开(公告)号：JP4461554B2
公开(公告)日：2010-05-12
申请号：JP2000052018
申请日：2000-02-28
Applicant: Jsr株式会社
IPC: C09D183/02 , C09D5/25 , C09D183/04 , H01L21/312
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公开(公告)号：JP4257518B2
公开(公告)日：2009-04-22
申请号：JP2003407323
申请日：2003-12-05
Applicant: Jsr株式会社
CPC classification number: C23C18/1216
Abstract: PROBLEM TO BE SOLVED: To provide a method for producing perovskite-type crystal particles each having an ABOx-type crystal structure, which enables significant improvement in the productivity by realizing lowering of the process temperature, and allowing the treatment time to be shortened when a dielectric film having the ABOx-type crystal structure is formed, and to provide a method for producing a dispersion containing the perovskite-type crystal particles. SOLUTION: The method for producing the perovskite-type crystal particles is a method for producing crystal particles having the ABOx-type crystal structure, which includes following processes (a) and (b). The process (a) comprises preparing a solution by dissolving a metal hydroxide containing at least one kind of metal A selected from Li, Na, Ca, Sr and Ba, and at lest one of a metal alkoxide and a metal complex, containing at least one kind of metal B selected from Ti, Zr, Hf, Ta and Nb into an organic solvent. The process (b) comprises obtaining crystal particles by adding water to the solution prepared in the process (a) so as to hydrolyze/condense precursors in the solution. COPYRIGHT: (C)2005,JPO&NCIPI
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公开(公告)号：JP3812104B2
公开(公告)日：2006-08-23
申请号：JP33144997
申请日：1997-12-02
Applicant: Jsr株式会社
IPC: C01G23/053 , C01B33/149 , C01G25/02 , C08G77/58 , C09D183/02 , C09D183/14 , H01L21/312 , H01L21/314
CPC classification number: C08G77/58 , C09D183/14 , H01L21/3121
Abstract: A composition for film formation and a film obtained by heating the composition. The composition comprises: (A) a hydrolyzate and/or partial condensate of a compound represented by the following formula (1) R nSi(OR )4-n wherein R and R may be the same or different and each represent an alkyl group having 1 to 5 carbon atoms or an aryl group having 6 to 20 carbon atoms, and n is an integer of 1 or 2; (B) a metal chelate compound represented by the following formula (2) R tM(OR )s-t wherein R represents a cheating agent, M represents a metal atom, R represents an alkyl group having 2 to 5 carbon atoms or an aryl group having 6 to 20 carbon atoms, s represents a valence of the metal M, and t is an integer of 1 to s; (C) an organic solvent having a boiling point of 110 to 180 DEG C; and (D) beta -diketone.
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