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    SEMICONDUCTOR LASER AND DRIVE METHOD THEREFOR, OPTICAL COMMUNICATION METHOD AND NODE, AND OPTICAL COMMUNICATION SYSTEM
    77.
    发明专利
    SEMICONDUCTOR LASER AND DRIVE METHOD THEREFOR, OPTICAL COMMUNICATION METHOD AND NODE, AND OPTICAL COMMUNICATION SYSTEM 失效

    公开(公告)号：JPH08162716A

    公开(公告)日：1996-06-21

    申请号：JP30095694

    申请日：1994-12-05

    Applicant: CANON KK

    Inventor： ONOUCHI TOSHIHIKO ,  MAJIMA MASAO

    IPC: H01S3/10 ,  B82Y20/00 ,  H01S5/00 ,  H01S5/042 ,  H01S5/062 ,  H01S5/0625 ,  H01S5/34 ,  H01S5/343 ,  H01S3/18

    Abstract: PURPOSE: To realize transmission with higher density by injecting a main modulation current into a part of a plurality of electrodes, while simultaneously, injecting a submodulation current having a phase regulated with respect to the main modulation current to the remaining electrodes at the time of low frequency switching. CONSTITUTION: An electrode 109 is fed not with a main modulation current ΔI1 but with a submodulation current ΔI2 . The oscillation mode of TE/TM is distributed such that when a DC bias is fixed in the vicinity of the switching point of a polarized wave, the polarized wave is switched from TE to TM upon increase of I1 and from TM to TE upon increase of I2 Consequently, the switching phase for the variation of I1 and I2 is reversed. When a modulation current ΔI1 in-phase with the ΔI2 is fed, the switching direction of polarized wave due to heat is reversed as compared with the ΔI1 and thereby switching of polarized wave can be suppressed for the ΔI1 . This structure realizes high density transmission.

    APPARATUS FOR SURPRESSING STIMULATED BRILLOUIN SCATTERING
    78.
    发明专利
    APPARATUS FOR SURPRESSING STIMULATED BRILLOUIN SCATTERING 失效

    公开(公告)号：JPH08111567A

    公开(公告)日：1996-04-30

    申请号：JP27071195

    申请日：1995-09-26

    Applicant: AT & T CORP

    Inventor： PAA BANGU HANSEN ,  UJIIRU KOOREN

    IPC: H01S5/00 ,  H01S5/026 ,  H01S5/042 ,  H01S5/06 ,  H01S5/0625 ,  H04B10/18 ,  H01S3/18 ,  H01S3/103

    Abstract: PROBLEM TO BE SOLVED: To suppress the induced Brillouin scattering in an optical fiber by using a semiconductor laser with a tuner that responds to a dither signal for continuous tuning. SOLUTION: A tuning semiconductor DBR laser 10 generates an active region 16, a passive waveguide 12, a plug reflector 14, and a modulator 20 and generates laser output. The plug reflector 14 with a grating region is arranged between an active region 16, where an input DC current 18 is inputted and a modulator 20 for generating laser oscillation output, in response to an input data signal 22. A dither source 24 generates a continuous dither signal. A tuner 26 is connected to an input region 28, operates, and injects a high output power into an optical fiber in response to the dither signal. The input region 28 to a passive waveguide 12 is heated locally by a resistor 30, and the tuning frequency of the tuner 26 is changed continuously and is tuned to a tuning semiconductor DBR laser 10, thus effectively suppressing an induced Brillouin scattering in the optical fiber.

    SEMICONDUCTOR LASER AND ITS ADJUSTMENT METHOD
    80.
    发明专利
    SEMICONDUCTOR LASER AND ITS ADJUSTMENT METHOD 失效

    公开(公告)号：JPH07263817A

    公开(公告)日：1995-10-13

    申请号：JP969995

    申请日：1995-01-25

    Applicant: ERICSSON TELEFON AB L M

    Inventor： JIYAN PIEERU UEEBAA

    IPC: H01S5/00 ,  H01S5/06 ,  H01S5/0625 ,  H01S5/12 ,  H01S5/125 ,  H01S3/18 ,  H01S3/103

    Abstract: PURPOSE: To obtain, for example, a DBR laser having a wide regulating range of an oscillation wavelength by altering effective refractive index of a phase by injecting current. CONSTITUTION: A plurality of gratings G1, G2, G3, G4 are disposed at both sides of a gain part. The gain part and a phase part respectively have electric contacts 10, 20, and gratings have electric contacts 30 for injecting currents. A common ground contact 40 for all the parts is provided. Further, antireflection coatings are applied at both sides of a laser unit 50. Periods (center wavelength) and strength (coupling coefficient) of the gratings G1 to G4 can be selected, so that spectra of reflecting zones are not superposed at all. The grating having longest center wavelength (lowest central frequency) is the grating G1. The grating for which the center wavelength is second longest length is the grating G2. The grating for which the central wavelength is third longest length is the grating G3. Furthermore, the grating with the shortest center wavelength is the grating G4.

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